| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cornet, Charles
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (61/61 displayed)
- 2024Large onset potential improvement with an epitaxial GaAs/Si photocathode for solar H2 production.
- 2024Atomic scale description of III-V/Si (001) heteroepitaxial crystals
- 2024Stability of monodomain III-V crystals and antiphase boundaries over a Si monoatomic stepcitations
- 2024Massive Onset Potential Shifting with an Epitaxial GaAs/Si Photocathode for Solar H2 Production
- 2024Understanding III-V/Si Heteroepitaxy: Experiments and Theory
- 2024Absolute surface and interface energy analysis of III-V/Si and its consequences on wetting characteristics
- 2024Absolute surface and interface energy analysis of III-V/Si and its consequences on wetting characteristics
- 2024Stability of monodomain III-V crystals over a Si monoatomic step including the formation of antiphase boundaries
- 2024Heteroepitaxial growth of III-V on Si: a DFT perspective
- 2023Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Buryingcitations
- 2023Optical characterizations of epitaxial materials: from crystal defects to optoelectronic properties
- 2023Impact of surface passivation of III-V elements on Si (001) substrate based on absolute surface and barrier energy calculations
- 2023Impact of surface passivation of III-V elements on Si (001) substrate based on absolute surface and barrier energy calculations
- 2022Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures, and Fermi levelscitations
- 2022On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientationscitations
- 2022Gallium phosphide-on-insulator integrated photonic structures fabricated using micro-transfer printingcitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2021High-Quality Factor Zinc-Blende III-V Microdisks on Silicon for Nonlinear Photonics
- 2021High-Quality Factor Zinc-Blende III-V Microdisks on Silicon for Nonlinear Photonics
- 2021Gallium phosphide transfer printing for integrated nonlinear photonics
- 2020Loss assessment in random crystal polarity gallium phosphide microdisks grown on siliconcitations
- 2020Dual wavelength evanescent coupler for nonlinear GaP-based microdisk resonatorscitations
- 2020Zinc-blende group III-V/group IV epitaxy: Importance of the miscutcitations
- 2020Random crystal polarity of Gallium phosphide microdisks on silicon
- 2019Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si : structural and optical characterizations
- 2019Photoelectrochemical water oxidation of GaP 1−x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvestingcitations
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2018Excitons bounded around In-rich antiphase boundaries
- 2018Excitons bounded around In-rich antiphase boundaries
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxycitations
- 2018Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxycitations
- 2018Antiphase boundaries in InGaP/SiGe/Si : structural and optical properties
- 2017Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloyscitations
- 2017Indium content impact on structural and optical properties of (In,Ga)As/GaP quantum dots
- 2017Second harmonic generation in gallium phosphide microdisks on silicon: from strict $bar{4}$ to random quasi-phase matchingcitations
- 2016Integrated Lasers on Siliconcitations
- 2016Dielectric properties of hybrid perovskites and drift-diffusion modeling of perovskite cellscitations
- 2016Impact of crystal antiphase boundaries on second harmonic generation in GaP microdisks
- 2016X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon
- 2016Thermal Management of Monolithic Versus Heterogeneous Lasers Integrated on Siliconcitations
- 2016Scanning tunneling microscopy investigation of GaP MBE growth on nominal and vicinal Si(001) substrates for optoelectronic applications
- 20163D GaP/Si(001) growth mode and antiphase boundaries
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
- 2014Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructurescitations
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationcitations
- 2012Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scatteringcitations
- 2012Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scatteringcitations
- 2012Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on siliconcitations
- 2012Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationcitations
- 2011X-ray study of antiphase domains and their stability in MBE grown GaP on Si.citations
- 2011Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
- 2011Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
- 2011Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-meritcitations
- 2009Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on Silicon
- 2008From k·p to atomic calculations applied to semiconductor heterostructures
- 2007From k·p to atomic calculations applied to semiconductor heterostructures
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document
X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon
Abstract
GaP, quasi-lattice matched to Si, allows growth of low defect density III-V/Si pseudosubstrates [1]. However, Antiphase boundaries (APB) likely appear and must be avoided. In this context, X-ray nanodiffraction and Bragg coherent diffraction imaging (BCDI) have been used as non-destructive techniques for local characterization of APB configuration [2]. Different GaP/Si nanolayers were studied at ID01/ESRF with an 8 keV coherent xray beam. Here a 140nm thick GaP presents annihilated APB (less than 3/m emerging APB). Bragg geometry ptychography of the APB has been attempted using (002) GaP weak reflection. This shows a peak splitting, characteristic of a heterogeneous APB density. But a still too high defect density precludes successful phase retrieval imaging. Two-dimensional fast mapping (kmap) [3] over the (004) and the (002) reflections shows for different regions of integrated intensities (ROI) (Fig. 1a) weak (Bragg maximum -0.5° on rocking angle) and strong scattering conditions (Fig. 1b and 1c respectively). As shown fig. 1b), the weak scattered intensity in ROI1, exhibits contrast lines oriented along both [1 1 0] and [-1 1 0] crystallographic directions. This contrast corresponds to regions of high tilt, surrounding misfit dislocations [3]. Strong scattering conditions performed on the (004) (Fig. 1c) and the (002) Bragg reflections present a quite different contrast with large spotty regions. We believe that this anisotropic contrast is due to weak tilt/strain, associated to the APD annihilation process.1. Y. P. Wang et al., Appl. Phys. Lett. 107, 191603 (2015).2. S. Labat et al., ACS Nano 9, 9210 (2015).3. M. H. Zoellner et al., ACS Appl. Mater. Interfaces 7, 9031 (2015).