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| Naji, M. |
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Pouliquen, Julie Le
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Publications (5/5 displayed)
- 2021High-Quality Factor Zinc-Blende III-V Microdisks on Silicon for Nonlinear Photonics
- 2020Loss assessment in random crystal polarity gallium phosphide microdisks grown on siliconcitations
- 2020Random crystal polarity of Gallium phosphide microdisks on silicon
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2018Excitons bounded around In-rich antiphase boundaries
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document
Excitons bounded around In-rich antiphase boundaries
Abstract
With the combination of the mature silicon-microelectronic technology and the advantages of optical data processing, silicon photonics becomes more and more essential for future low-cost, high-speed technology[1]. The antiphase boundaries (APBs), which are believed to be detrimental defects for optical devices, have always been seen as one of the tough hurdles for the development of silicon photonics[2]. However, in this work we provided a new insight into the APBs which are involved in an efficient luminescence process. Temperature-and power-dependent photoluminescence (PL), X-ray diffraction (XRD) and energy-dispersive X-ray (EDX) elemental mapping techniques have been employed for a thorough analysis of APBs' contribution to optical and structural properties of an InGaP/SiGe/Si sample. The main PL peak is attributed to the recombination of excitons bounded around the neutralized In-rich APBs[3], which behave as vertical nanostructures. This scenario is in good correlation with previous theoretical works[4].