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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Levallois, Christophe
Institut National des Sciences Appliquées de Rennes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2024Photoelectrode/Electrolyte interfacial band lineup engineering with alloyed III-V thin films grown on Si substrate.citations
- 2023Mechanical and optical properties of amorphous silicon nitride-based films prepared by electron cyclotron resonance plasma-enhanced chemical vapor depositioncitations
- 2022Low-temperature spatially-resolved luminescence spectroscopy of microstructures with strained III-V quantum wells
- 2022Strain engineering in III-V photonic components through structuration of SiN x filmscitations
- 2021III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production
- 2021Stress Engineering of Dielectric Films on Semiconductor Substrates
- 2021Mechanical and Optical Properties of Amorphous SiN-Based Films Prepared By ECR-PECVD and CCP-PECVD
- 2021Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wellscitations
- 2021Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wellscitations
- 2021Mechanical strain mapping of GaAs based VCSELscitations
- 2020Random crystal polarity of Gallium phosphide microdisks on silicon
- 2020Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stresscitations
- 2019Towards MIR VCSELs operating in CW at RT
- 2019Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si : structural and optical characterizations
- 2019Photoelectrochemical water oxidation of GaP 1−x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvestingcitations
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2018Excitons bounded around In-rich antiphase boundaries
- 2018Excitons bounded around In-rich antiphase boundaries
- 2018Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxycitations
- 2018Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxycitations
- 2018Antiphase boundaries in InGaP/SiGe/Si : structural and optical properties
- 2016Enhancement of VCSEL performances using a novel bonding process based on localized electroplating copper through Silicon vias
- 2016Enhancement of VCSEL performances using a novel bonding process based on localized electroplating copper through Silicon vias
- 2016Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wellscitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
Places of action
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document
Random crystal polarity of Gallium phosphide microdisks on silicon
Abstract
Second order nonlinear devices are at the basis of many present and future photonic applications, from modulation and frequency conversion to entanglement and quantum computing.1 The research community is thus constantly looking for materials presenting both great optical performances and simple fabrication, processing and integration capabilities.In this framework, gallium phosphide (GaP) has recently been presented as a promising material for such integrated devices.2 In the field of nonlinear optics, the advantages of GaP are known for long: it features a wide and indirect band-gap, limiting optical losses in a large optical and radiofrequency bandwidth and its nonlinear properties are good in comparison to other nonlinear materials.If very high frequency conversion efficiencies have already been reported in III-V photonic resonators, these demonstrations suffer from low reproducibility due to the strict selection rules imposed to the resonant modes involved in the nonlinear interaction.In this work we demonstrate the realization of high-quality factor microdisks made of GaP epitaxially grown on Si.This polar on non-polar material growth allows us to create in the GaP matrix a distribution of domains of opposite polarity with controlled size and proportion. We previously demonstrated that this random polarity can fully relax the phase matching selection rules of the second order nonlinear process limiting the required conditions to the double-resonance one.3The growth methods and technological processes allowing us to realize these devices will be discussed as well as the first optical characterizations of their optical properties, in the framework of future nonlinear optics experiments. This work is funded by the French national research agency through the project ORPHEUS ANR-17-CE24-0019-01 and Région Bretagne and is supported by the NanoRennes technological platform, within Renatech network. 1.Wang, J., et al. Nat. Photonics 1–12 (2019) doi: 10.1038/s41566-019-0532-1 2.Wilson, D. J. et al. Nat. Photonics 1–6 (2019) doi: 10.1038/s41566-019-0537-9 3.Guillemé, P. et al.. Semicond. Sci. Technol. 32, 065004 (2017).