| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Corre, Alain Le
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2020Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2017Indium content impact on structural and optical properties of (In,Ga)As/GaP quantum dots
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationcitations
- 2012Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scatteringcitations
- 2011X-ray study of antiphase domains and their stability in MBE grown GaP on Si.citations
- 2011Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
- 2011Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-meritcitations
- 2009Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on Silicon
- 2006Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µmcitations
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document
Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on Silicon
Abstract
Si is the well-known ruling material of semiconductor microelectronic industry. The rapid trend of dimension reduction and increasing density of metal interconnects has induced a large interest for optoelectronic materials (especially III-V semiconductors) integration onto Si, useful to replace electrical interconnects by optical ones. First, we present a theoretical approach using ab initio calculations which give crucial information on III-V-Si band lineups (InAs/Si, InAs/GaP, GaP/Si) that are non trivials in such systems. Growth of different light emitters (bulk GaPN diluted-nitride alloy, GaAsP quantum wells, InAs and InP quantum dots) on GaP (001) substrates is also presented. Photoluminescence measurements are compared to previous abinitio calculations. We then present the achievement of coherent crystalline growth of 90 nm good quality GaP onto 4°-off Si(001). Epilayers are characterised using both X-Ray scattering and Atomic Force Microscopy. Special emphasis is done on the comprehension of anti-phase domains (APD) formation, which are very particular defects originating from the growth of the zincblende III-V polar material onto a non-polar Si substrate, the “polarity” term describing the sublattice allocations of the III/V material. An APD detection method is given using scattering measurements around the (002) reflection and the interpretation is supported by X-ray scattering simulations. Finally, a basic structure for light emitting diode on Silicon is proposed.