| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cornet, Charles
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (61/61 displayed)
- 2024Large onset potential improvement with an epitaxial GaAs/Si photocathode for solar H2 production.
- 2024Atomic scale description of III-V/Si (001) heteroepitaxial crystals
- 2024Stability of monodomain III-V crystals and antiphase boundaries over a Si monoatomic stepcitations
- 2024Massive Onset Potential Shifting with an Epitaxial GaAs/Si Photocathode for Solar H2 Production
- 2024Understanding III-V/Si Heteroepitaxy: Experiments and Theory
- 2024Absolute surface and interface energy analysis of III-V/Si and its consequences on wetting characteristics
- 2024Absolute surface and interface energy analysis of III-V/Si and its consequences on wetting characteristics
- 2024Stability of monodomain III-V crystals over a Si monoatomic step including the formation of antiphase boundaries
- 2024Heteroepitaxial growth of III-V on Si: a DFT perspective
- 2023Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Buryingcitations
- 2023Optical characterizations of epitaxial materials: from crystal defects to optoelectronic properties
- 2023Impact of surface passivation of III-V elements on Si (001) substrate based on absolute surface and barrier energy calculations
- 2023Impact of surface passivation of III-V elements on Si (001) substrate based on absolute surface and barrier energy calculations
- 2022Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures, and Fermi levelscitations
- 2022On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientationscitations
- 2022Gallium phosphide-on-insulator integrated photonic structures fabricated using micro-transfer printingcitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2021High-Quality Factor Zinc-Blende III-V Microdisks on Silicon for Nonlinear Photonics
- 2021High-Quality Factor Zinc-Blende III-V Microdisks on Silicon for Nonlinear Photonics
- 2021Gallium phosphide transfer printing for integrated nonlinear photonics
- 2020Loss assessment in random crystal polarity gallium phosphide microdisks grown on siliconcitations
- 2020Dual wavelength evanescent coupler for nonlinear GaP-based microdisk resonatorscitations
- 2020Zinc-blende group III-V/group IV epitaxy: Importance of the miscutcitations
- 2020Random crystal polarity of Gallium phosphide microdisks on silicon
- 2019Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si : structural and optical characterizations
- 2019Photoelectrochemical water oxidation of GaP 1−x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvestingcitations
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2018Excitons bounded around In-rich antiphase boundaries
- 2018Excitons bounded around In-rich antiphase boundaries
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxycitations
- 2018Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxycitations
- 2018Antiphase boundaries in InGaP/SiGe/Si : structural and optical properties
- 2017Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloyscitations
- 2017Indium content impact on structural and optical properties of (In,Ga)As/GaP quantum dots
- 2017Second harmonic generation in gallium phosphide microdisks on silicon: from strict $bar{4}$ to random quasi-phase matchingcitations
- 2016Integrated Lasers on Siliconcitations
- 2016Dielectric properties of hybrid perovskites and drift-diffusion modeling of perovskite cellscitations
- 2016Impact of crystal antiphase boundaries on second harmonic generation in GaP microdisks
- 2016X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon
- 2016Thermal Management of Monolithic Versus Heterogeneous Lasers Integrated on Siliconcitations
- 2016Scanning tunneling microscopy investigation of GaP MBE growth on nominal and vicinal Si(001) substrates for optoelectronic applications
- 20163D GaP/Si(001) growth mode and antiphase boundaries
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
- 2014Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructurescitations
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationcitations
- 2012Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scatteringcitations
- 2012Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scatteringcitations
- 2012Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on siliconcitations
- 2012Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationcitations
- 2011X-ray study of antiphase domains and their stability in MBE grown GaP on Si.citations
- 2011Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
- 2011Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
- 2011Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-meritcitations
- 2009Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on Silicon
- 2008From k·p to atomic calculations applied to semiconductor heterostructures
- 2007From k·p to atomic calculations applied to semiconductor heterostructures
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document
Indium content impact on structural and optical properties of (In,Ga)As/GaP quantum dots
Abstract
Despsite many efforts undertaken by the semiconductor scientific community, the demonstration of room-temperature laser source electrically pumped monolithically grown on silicon substrate is still an important challenge [1]. Amongst III-V semiconductors, GaP appears as a promising candidate thanks to its small lattice mismatch with Si [2]. Nevertheless, devices based on GaP materials need to deal with the difficulty to obtain efficient active area due to its indirect character. To overcome this, (In,Ga)As quantum dots (QDs) [3] were proposed. In this contribution, Influence of indium content on structural and optical properties is investigated in order to promote the direct optical transition of QDs. Four nominal In content: 10, 25, 35 and 50% of (In,Ga)As/GaP QDs grown by solid source molecular beam epitaxy (SS-MBE) on GaP substrate are analyzed by photoluminesence and atomic force microscopy (AFM) experiments. Significant redshift is reported in comparison between QDs with 10% to 35% of In content due to the valence band modification [4]. Moreover, it is shown that, while for low In contents a monomodal QDs distribution is observed [Fig1.a], a bimodal one appears for In contents reaching 35% and beyond [Fig1.b]. Controlling this distribution is a great challenge for obtaining a direct bandgap emission with GaP-based materials. This research project is supported by the Labex Cominlabs project: "3D Optical Many Cores" and the OPTOSI ANR project N°12-BS03-002-02.[1]C. Cornet, Y. Léger, et C. Robert, Integrated Lasers on Silicon. ISTE-Elsevier, 2016. [2]Y. Furukawa, H. Yonezu, A. Wakahara, S. Ishiji, S. Y. Moon, et Y. Morisaki, « Growth of Si/III–V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits », J. Cryst. Growth, vol. 300, no 1, p. 172‑176, mars 2007. [3]M. Heidemann, S. Höfling, et M. Kamp, « (In,Ga)As/GaP electrical injection quantum dot laser », Appl. Phys. Lett., vol. 104, no 1, p. 11113, janv. 2014. [4]C. Robert et al., « Electronic, optical, and structural properties of (In,Ga)As/GaP quantum dots », Phys. Rev. B, vol. 86, no 20, p. 205316, nov. 2012.