| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vilquin, Bertrand
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (68/68 displayed)
- 2024Development of ferroelectric and antiferroelectric H1-xZrxO2-based capacitors for non-volatile memories and power supply applications
- 2024Serendipity in materials science: how a simple doping leads to novel and outstanding properties in simple dielectric HfO2 !
- 2024Stabilization of low dimensional ferroelectric HfZrO2 film
- 2023VO2 stabilization on Si for memristor in neuromorphic computing applications
- 2023VO2 stabilization on Si for memristor in neuromorphic computing applications
- 2023How ALD deposition analysis can help PVD deposition process!
- 2023How ALD deposition analysis can help PVD deposition process!
- 2023Engineering the nano and micro structures of sputtered HfZrO2 thin films
- 2023Engineering the nano and micro structures of sputtered HfZrO2 thin films
- 2023Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitorscitations
- 2023Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitorscitations
- 2023Homo-epitaxial growth of Lithium Niobate by Pulsed-Laser Deposition
- 2023Thermal information processing using phase change materials
- 2023Thermal information processing using phase change materials
- 2023Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity
- 2023Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity
- 2022Heteroepitaxial growth of Lithium Niobate Thin Films on sapphire substrates with different orientations by Pulsed-Laser Depositioncitations
- 2022Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties
- 2022Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties
- 2022Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layercitations
- 2022Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layercitations
- 2022A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching
- 2022A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching
- 2022Interface engineering for vanadium dioxide (VO2) integration on silicon
- 2022Integration of VO2 on Silicon for thermotronic applications
- 2022How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties
- 2022How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties
- 2021The discovery of ferroelectricity in HfO2
- 2021The discovery of ferroelectricity in HfO2
- 2021Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application
- 2021Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application
- 2021Nanostructuration effect on the properties of ferroelectric HfZrO2
- 2021Nanostructuration effect on the properties of ferroelectric HfZrO2
- 2021Développement d’un capteur environnemental ultra-basse consommation à base de SnO2 en technologie CMOS FDSOI
- 2021Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions
- 2021Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions
- 2021Effect of bottom electrodes on HZO thin film properties
- 2021Effect of bottom electrodes on HZO thin film properties
- 2021Structure, chemical analysis, and ferroelectric properties of chemical solution derived epitaxial PbZr$_{0.2}$Ti$_{0.8}$O$_3$ films for nanomechanical switching
- 2021Structure, chemical analysis, and ferroelectric properties of chemical solution derived epitaxial PbZr$_{0.2}$Ti$_{0.8}$O$_3$ films for nanomechanical switching
- 2021Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
- 2021Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
- 2021Metallic oxide defect luminescent emission for application in solar cells and WLEDs
- 2021Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
- 2021Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
- 2021Reduction of HfZrO2 capacitor wake-up effect
- 2019Ferroelectric hafnium/zirconium oxide solid solutions deposited by RF magnetron sputtering with a single target
- 2019Ferroelectric HfO2 based devices fabrication and remaining issues
- 2019Sputtered ferroelectric hafnium/zirconium oxide solid solutions from a single target
- 2019Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputteringcitations
- 2019Vanadium Oxide Based Waveguide Modulator Integrated on Silicon
- 2018Deposition of hafnium/zirconium oxides solid solution by reactive magnetron sputtering for fast and low power ferroelectric devices
- 2017Room-temperature soft mode and ferroelectric like polarization in SrTiO3 ultrathin films: Infrared and ab initio studycitations
- 2015Electrode interface controlled electrical properties in epitaxial Pb(Zr0.52Ti0.48)O-3 films grown on Si substrates with SrTiO3 buffer layer
- 2015Electrode interface controlled electrical properties in epitaxial Pb(Zr0.52Ti0.48)O-3 films grown on Si substrates with SrTiO3 buffer layer
- 2015Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates
- 2015Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates
- 2015Surface atomic and chemical structure of relaxor Sr0.63Ba0.37Nb2O6(001)citations
- 2015Nanoscale study of perovskite BiFeO3/spinel (Fe, Zn)3O4 co-deposited thin film by electrical scanning probe methods
- 2015Towards ferroelectric control of topological insulators and surface states
- 2015Towards ferroelectric control of topological insulators and surface states
- 2014Phase transition in ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 epitaxial thin filmscitations
- 2014Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films
- 2014Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films
- 2014Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performancecitations
- 2013Full field electron spectromicroscopy applied to ferroelectric materialscitations
- 2012Chemistry and Atomic Distortion at the Surface of an Epitaxial BaTiO3 Thin Film after Dissociative Adsorption of Watercitations
- 2010Oxides heterostructures for nanoelectronicscitations
Places of action
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document
Thermal information processing using phase change materials
Abstract
Industrial waste heat in the EU is estimated about 300TWh/year. This freely available energy remains unharvested. With radiative thermal devices, it could in contrary power internet of things. Unlike its electronic counterparts, thermal information processing (thermotronics) via radiative heat flow and temperature control is a nascent technology. To achieve this goal, a thermal transistor has been proposed1. It consists of a membrane of a material undergoing a metal-insulator transition (MIT), e.g. VO2, which acts as the gate between two thermal reservoirs (source and drain), e.g. SiO2. VO2 undergoes a structural phase transformation (SPT) at approximately 70°C from insulating monoclinic structure at room temperature to metallic rutile. The two crystallographic structures have large variation in their complex refractive index in the mid-IR frequency range.To keep with the current trends of microelectronic industry, it is imperative to integrate VO2 on Si. However, the higher lattice mismatch and formation of oxides and silicates at the interface between VO2 and crystalline Si degrade the quality and functionality of VO2 film. Additionally, VO2(M1) is a challenging material to integrate into patterned heterostructures because it can exist not only as multiple polymorphs (A, B, M1) but the high temperature depositions can lead to formation of various oxidation states phases that are present in the V-O system (VnO2n-1, VnO2n+1).This work was conducted to study the growth of VO2 on silicon with oxide buffer layers using RF magnetron sputtering of a V2O5 ceramic target in argon atmosphere. We studied the structure-property relationships, specifically electrical and optical properties as a function of temperature across the Tc. Structural and compositional characterization are carried out using x-ray diffraction (XRD), atomic force microscopy (AFM), and x-ray photoemission spectroscopy (XPS) respectively; optical responses are studied using FTIR and electrical characterizations are performed using the four-point probe method.With the use of a very thin metal oxide buffer layer between silicon substrate and VO2 film, we demonstrate a high resistivity ratio (3 orders of magnitude between the two phases) and investigate the scope of improvement. The results show the influence of substrates temperature, VO2 grain size and strain on the amplitude of transition as well as the crystal structure of buffer layer on the structural and physical properties of interfaces and film morphology which subsequently affect the electrical bistability of VO2. The preliminary findings mentioned here are being utilized to improve the electrical bistability, thus allowing us to improve the reproducibility in operational modes of thermotronic devices.