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Phung, Luong Viêt
in Cooperation with on an Cooperation-Score of 37%
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Publications (7/7 displayed)
- 2024Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substratescitations
- 2023Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration
- 2023Vertical pin diodes on large freestanding (100) diamond film
- 2022Design of a test package for high voltage SiC diodes
- 2016Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applicationscitations
- 2013Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodescitations
- 2012Edge termination design improvements for 10 kV 4H-SiC bipolar diodes
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conferencepaper
Edge termination design improvements for 10 kV 4H-SiC bipolar diodes
Abstract
International audience ; 10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested. Measurement results show that the inclusion of JTE rings improve the edge termination efficiency. The measurements indicate also better reverse performances of diodes with large bend radius.