| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Isoird, Karine
French National Centre for Scientific Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2023Vertical pin diodes on large freestanding (100) diamond film
- 2021Ohmic contacts by phosphorous ion implantation on (111) N-type CVD Diamond
- 2012"Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process"
- 2012An assessment of contact metallization for high power and high temperature diamond Schottky devicescitations
- 2009A New Junction Termination Using a Deep Trench Filled With BenzoCycloButenecitations
- 2003Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment
- 2002A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effectscitations
- 2001Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing
Places of action
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conferencepaper
Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment
Abstract
International audience ; Due to more severe operating condition (higher electric field, higher temperature,…), power electronics trends require to consider more accurately the dielectric environment of the semiconductor. The use of possible alternative semiconductors adds reason for such studies. Maximum electric field stress, relative dielectric permittivity and energy band gap properties, theoretically required for the SiC device passivation, are discussed. Advantages and drawbacks of high dielectric permittivity materials for passivation are emphasized. Then, a new 50 kV / 500°C experimental setup allowing their precise characterization once the test-vehicles chosen, is presented in the paper.