| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vila, Laurent
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (37/37 displayed)
- 2024Ferroelectric spin orbit devices for ultralow power computing
- 2023Electrical characterization of the azimuthal anisotropy of $(mathrm{Ni}_xmathrm{Co}_{1-x})mathrm{B}$-based ferromagnetic nanotubescitations
- 2022Anisotropic magnetoresistance in Mn 4− x Ni x N and the change in the crystalline fieldcitations
- 2021Spin–Charge Interconversion in KTaO 3 2D Electron Gasescitations
- 2021Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technologycitations
- 2021Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technologycitations
- 2021Enhancement of YIG|Pt spin conductance by local Joule annealingcitations
- 2021Spin–Charge Interconversion in KTaO3 2D Electron Gasescitations
- 2021Room-temperature ferroelectric switching of spin-to-charge conversion in GeTecitations
- 2021Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluridecitations
- 2020Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopycitations
- 2020Switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO 3citations
- 2020Enhancement of YIG$|$Pt spin conductance by local Joule annealing
- 2019Spin-dependent transport characterization in metallic lateral spin valves using one-dimensional and three-dimensional modelingcitations
- 2019Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Filmscitations
- 2019Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Filmscitations
- 2019Magnetic and magneto-transport properties of Mn4N thin films by Ni substitution and their possibility of magnetic compensationcitations
- 2018Extrinsic pinning of magnetic domain walls in CoFeB-MgO nanowires with perpendicular anisotropycitations
- 2018Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperaturescitations
- 2018Wire edge dependent magnetic domain wall creep
- 2018Toward efficient spin/charge conversion using topological insulator surface (Conference Presentation)
- 2018Calculation method of spin accumulations and spin signals in nanostructures using spin resistorscitations
- 2017Geometrical control of pure spin current induced domain wall depinning
- 2017Effective field analysis using the full angular spin-orbit torque magnetometry dependencecitations
- 2016Spin Hall effect in AuW alloys
- 2015The nature of domain walls in ultrathin ferromagnets revealed by scanning nanomagnetometrycitations
- 2014Electric-field assisted depinning and nucleation of magnetic domain walls in FePt/Al2O3/liquid gate structurescitations
- 2014Electric-field assisted depinning and nucleation of magnetic domain walls in FePt/Al2O3/liquid gate structurescitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2012Voltage control of magnetism in ferromagnetic structures (Conference Paper)
- 2012Voltage control of magnetism in ferromagnetic structures (Conference Paper)
- 2011Magnon magnetoresistance of NiFe nanowires: size dependence and domain wall detectioncitations
- 2010Effect of crystalline defects on domain wall motion under field and current in nanowires with perpendicular magnetization.citations
- 2008Growth of vertically aligned arrays of carbon nanotubes for high field emissioncitations
- 2004Growth and field-emission properties of vertically aligned cobalt nanowire arrayscitations
- 2002Tunable remanent state resonance frequency in arrays of magnetic nanowirescitations
Places of action
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article
Growth of vertically aligned arrays of carbon nanotubes for high field emission
Abstract
International audience ; Vertically aligned multi-walled carbon nanotubes have been grown on Ni-coated silicon substrates, by using either direct current diode or triode plasma-enhanced chemical vapor deposition at low temperature (around 620 °C). Acetylene gas has been used as the carbon source while ammonia and hydrogen have been used for etching. However densely packed (∼ 109 cm− 2) CNTs were obtained when the pressure was ∼ 100 Pa. The alignment of nanotubes is a necessary, but not a sufficient condition in order to get an efficient electron emission: the growth of nanotubes should be controlled along regular arrays, in order to minimize the electrostatic interactions between them. So a three dimensional numerical simulation has been developed to calculate the local electric field in the vicinity of the tips for a finite square array of nanotubes and thus to calculate the maximum of the electron emission current density as a function of the spacing between nanotubes. Finally the triode plasma- enhanced process combined with pre-patterned catalyst films (using different lithography techniques) has been chosen in order to grow regular arrays of aligned CNTs with different pitches in the micrometer range. The comparison between the experimental and the simulation data permits to define the most efficient CNT-based electron field emitters