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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Hou, Yaonan
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document
2D material based optoelectronics by electroplating
Abstract
Developing scalable techniques for growing transition metal dichalcogenides (TMDCs) 2D materials is a major challenge that needs to be overcome before these materials can make an impact on the (opto-) electronic industry. Electroplating (electrodeposition) is an industrially acceptable deposition technique that has unique advantages. In this work, we present a novel electrode design that enable MoS2 to be grown laterally over an insulator. Photodetector devices were developed based on electrodeposited TMDCs. We will then present vertical growth of large area and micropatterned MoS2 and WS2 monolayers on graphene electrodes. These results demonstrate that electrodeposition is an attractive method for producing device quality 2D materials which can be scaled to wafer sizes for fabrication industries.