People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Cimalla, Volker
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024Absorption and birefringence study for reduced optical losses in diamond with high nitrogen-vacancy concentrationcitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Epitaxial Lateral Overgrowth of Wafer‐Scale Heteroepitaxial Diamond for Quantum Applicationscitations
- 2022Direct low-temperature bonding of AlGaN/GaN thin film devices onto diamond substrates
- 2021Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carrierscitations
- 2021Coalescence aspects of III-nitride epitaxycitations
- 2021Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation networkcitations
- 2018Metallization design investigations for graphene as a virtually massless electrode material for 2.1 GHz solidly mounted (BAW-SMR) resonatorscitations
- 2017Wettability investigations and wet transfer enhancement of large-area CVD-Graphene on aluminum nitridecitations
- 2016Electrostatic self-assembly of diamond nanoparticles onto Al- and N-polar sputtered aluminum nitride surfacescitations
- 2016Interaction of indium oxide nanoparticle film surfaces with ozone, oxygen and watercitations
- 2012Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTscitations
- 2010Elastic properties of nanowirescitations
- 2010Investigation of stress in AIN thin films for piezoelectric MEMS
- 2009Determination of the composition of In(x)Ga(1-x)N from strain measurementscitations
- 2009Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3 ; Bandabstand, elektronische Struktur und Elektronenakkumulation an der Oberfläche von kubischem und rhomoedrischem In2O3citations
- 2005New route of nanowire integration in microfabrication processes for sensor applications
Places of action
Organizations | Location | People |
---|
article
New route of nanowire integration in microfabrication processes for sensor applications
Abstract
<p>The integration of nanostructures like nanowires into working devices is often a difficult task. Even though demonstration devices with fascinating properties have been build [1], they are rather far away from being integrated into microelectronic devices. Recently, we successfully demonstrated [2] how thin film fracture can be beneficially used to serve as a template for the fabrication of well aligned nanowires. Here we demonstrate how this approach can be used to integrate nanowires into a conventional silicon microstructure. We use silicon wafers coated with a microstructured photoresist thin film. At special structured predetermined breaking points, designed by conventional lithography steps, nanocracks can be fabricated by using cold gases, see fig. 1a and b. Those cracks serve as a template for the further processing. Most simple, they can just be filled with metal by sputter deposition, resulting in nanowires (see fig. 1c) connected with microstructured power lines. Such an approach can be chosen to fabricate nanosensors. By applying a more sophisticated deposition technique, parallel nanowires can be formed, even with different materials, see fig. 1d. Here, the nanocrack is used as a nanoscale shadow mask. Another variant is the formation of nanochannels by etching into the material. Nanochannels with a width of less than 40 nm could be fabricated, see fig. 1e. Moreover, we demonstrate this process also on flexible polymer substrates. First demonstration circuits, applications in the field of optics, and nanofluidic as well as the details of the fabrication process will be discussed.</p>