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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Watanabe, K.
Engineering and Physical Sciences Research Council
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayerscitations
- 2023Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe2/MoSe2 heterobilayerscitations
- 2023Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS4 Transistorscitations
- 2022Guided Wave Transceive Technique Using Magnetostrictive Effect of STPG370 Pipe itself and High-Temperature Superconductor SQUIDcitations
- 2021Tuneable spin injection in high-quality graphene with one-dimensional contacts
- 2021Cathodoluminescence of carbon-related defects in hexagonal boron nitride
- 2020Low-temperature monoclinic layer stacking in atomically thin CrI3 crystalscitations
- 2020Untying the insulating and superconducting orders in magic-angle graphenecitations
- 2019Nonreversible Transition from the Hexagonal to Wurtzite Phase of Boron Nitride under High Pressure: Optical Properties of the Wurtzite Phasecitations
- 2019Sensitivity of the superconducting state in thin filmscitations
- 20192D-3D integration of high-kappa dielectric with 2D heterostructures for opto-electronic applicationscitations
- 2018Unusual Suppression of the Superconducting Energy Gap and Critical Temperature in Atomically Thin NbSe2citations
- 2018Time-of-Flight Neutron Imaging on IMAT@ISIS: A New User Facility for Materials Science
- 2017Edge currents shunt the insulating bulk in gapped graphenecitations
- 2017Edge currents shunt the insulating bulk in gapped graphenecitations
- 2017Edge currents shunt the insulating bulk in gapped graphenecitations
- 2017Ballistic superconductivity in semiconductor nanowires:
- 2017Superplasticity of Inconel 718 after processing by high-pressure sliding (HPS)citations
- 2013Grain boundary segregation in a bronze-route Nb3Sn superconducting wire studied by atom probe tomographycitations
- 2012Grain structure and irreversibility line of a bronze route CuNb reinforced Nb3Sn multifilamentary wirecitations
- 2011(Lu0.8Ce0.2)2Fe17 single crystal under hydrostatic and 'negative' pressure induced by hydrogenationcitations
- 2011Magnetic states and magnetostriction in Y.sub.2./sub.Fe.sub.17-x./sub.Ru.sub.x./sub. system
- 2011(Lu.sub.0.8./sub.Ce.sub.0.2./sub.).sub.2./sub.Fe.sub.17./sub. single crystal under hydrostatic and ‘negative’ pressure induced by hydrogenationcitations
- 2011High-field magnetization study of R.sub.2./sub.Fe.sub.17./sub.H.sub.3./sub. (R=Tb,Dy,Ho and Er) single-crystalline hydridescitations
- 2010Sublattice contributions to the magnetism of UFe.sub.5./sub.Al.sub.7./sub. and UFe.sub.6./sub.Al.sub.6./sub.citations
- 2010Crystal structure and magnetoelastic properties of Lu.sub.2./sub.Fe.sub.16.5./sub.Ru.sub.0.5./sub. intermetallic compound
Places of action
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document
Tuneable spin injection in high-quality graphene with one-dimensional contacts
Abstract
Spintronics involves the development of low-dimensional electronic systems that support the creation and control of spin transport, with potential use in quantum-based computation. To advance these efforts structures that support spin transport while enabling high-quality electronic transport are desired, with graphene being an ideal platform to contribute towards this goal. There has been significant progress in improving spin transport characteristics, e.g. by encapsulation and reducing impurities in graphene, but the influence of standard two-dimensional (2D) tunnel contacts, such as pinholes and unintentional doping leading to non-uniformity in the graphene channel, remains difficult to eliminate. Here, we report the observation of efficient spin injection and tuneable spin signal in high-quality and fully-encapsulated graphene, enabled by van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts within the graphene channel, allowing the ability to routinely achieve high-quality channels, currently with mobilities up to 130,000 cm2V-1s-1 and spin diffusion lengths approaching 20 micrometer. Despite the direct contact between the ferromagnetic metal and graphene, the nanoscale-wide 1D contacts offer a sizeable contact resistance, allowing spin injection both at room and at low temperature, with the latter exhibiting spin injection efficiency comparable with standard 2D tunnel contacts. Furthermore, owing to gate tuneability of the 1D contacts' resistance at low temperature, the observed spin signals can be enhanced by as much as an order of magnitude by p-doping of the graphene channel, adding new functionality to the device performance.