| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ettlinger, Rebecca Bolt
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2018Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfercitations
- 2018Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfercitations
- 2017Temperature dependent photoreflectance study of Cu2SnS3 thin films produced by pulsed laser depositioncitations
- 2016CTS and CZTS for solar cells made by pulsed laser deposition and pulsed electron deposition
- 2015Pulsed laser deposition from ZnS and Cu 2 SnS 3 multicomponent targetscitations
- 2015Optical properties and surface characterization of pulsed laser-deposited Cu2ZnSnS4 by spectroscopic ellipsometrycitations
- 2015Pulsed laser deposition from ZnS and Cu2SnS3 multicomponent targetscitations
- 2015Chalcogenide compounds made by pulsed laser deposition at 355 and 248 nm
- 2015Morphology of Copper Tin Sulfide Films Grown by Pulsed Laser Deposition at 248 and 355 nm
- 2015Optical properties and surface characterization of pulsed laser-deposited Cu 2 ZnSnS 4 by spectroscopic ellipsometrycitations
- 2015ZnS top layer for enhancement of the crystallinity of CZTS absorber during the annealingcitations
- 2014Thin films of absorber material Cu2ZnSnS4 for solar cells
- 2014Optical properties and secondary phase identification in PLD-grown Cu 2 ZnSnS 4 for thin-film photovoltaics
- 2014Optical properties and secondary phase identification in PLD-grown Cu2ZnSnS4 for thin-film photovoltaics
- 2014Nanosecond laser ablation and deposition of silver, copper, zinc and tincitations
- 2014Pulsed laser deposition of Cu-Sn-S for thin film solar cells
Places of action
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document
Thin films of absorber material Cu2ZnSnS4 for solar cells
Abstract
Pulsed Laser Deposition technique is applied to the production of thin films of CZTS (Cu<sub>2</sub>ZnSnS<sub>4</sub>).This vacuum technique has proven to be particularly successful in the production of films with acomplex stoichiometry, as in the case of high temperature superconductors. The material ablated bythe laser pulse is transferred to the substrate at very high kinetic energy (~ keV), thus resulting inhigh mobility of the adsorpted atoms yet at low substrate temperatures. Since the reaction ofdecomposition of CZTS via S and SnS evaporation is the main problem all vacuum techniques haveto deal with, it is of interest to see here how the crystallinity develops out of such high energetic,stoichiometric transfer. We investigate the optical and structural properties of thin films produced in high vacuum (p < 10<sup>-6</sup>mbar) with a single target made with sintered powder with stoichiometry: Cu2ZnSnS4. The films are deposited on Mo coated SLG in the temperature range from 25C to 500C. X-ray diffraction patterns show an increase in the intensity of main peak associated to kesterite CZTS up to asubstrate temperature of 300 C, then secondary phases start to show up and the main peak associated to kesterite drops down in intensity. Optical measurements (direct and diffusereflectance) and ellipsometry analysis are used to investigate the optical constants of the films produced and to estimate the bandgap, while AFM images are used to investigate the roughness.The same measurements are carried out on the same samples after annealing at 500 C for 20 mins inN2 + S atmosphere and the results are compared.The films produced are in the thickness range 600 – 1000 nm, the excimer laser used is a LambdaPhysik filled with KrF working at 248 nm, with pulse length of 20 ns. Pulse repetition rate was setat 10 Hz, the deposition process was lasting 1 hour.