| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Michel, Stéphanie
Institut Jean Lamour
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2024Electroleaching and electrodeposition of silver in ethaline 1 : 2 and propeline 1 : 3: transport properties and electrode phenomena†
- 2023Propeline : a new candidate for precious metal recovery 3rd International Meeting on Deep Eutectic Systems, Lisbonne, 19-22 juin 2023
- 2003Contribution à l'élaboration d'électrodépôts de matériaux thermoélectriques de type Bi2Te3 et Bi2(Te0,9Se0.1)3
Places of action
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thesis
Contribution à l'élaboration d'électrodépôts de matériaux thermoélectriques de type Bi2Te3 et Bi2(Te0,9Se0.1)3
Abstract
The electrochemical reduction of Bi3+, HTe02+, H2Se03 soluble species in nitric acid electrolyte alloys the formation of materials which are developed attractive thermoelectrics properties . The work concerns the specific definition of chemical and electrochemical parameters necessary for the formation of binary and ternary bismuth tellurides thick films (10 to 20um). The first part is concerning the perfect knowledge of chemical and electrochemical parameters for thermoelectric material likeBixTey with a ratio x/y varying around 2/3 and then leading to a p or n type semiconductors depending to the ratio's value. The second part, using methodology of experimental design, leads tothe protocol's definition for the realisation and the study of ternary Bi2 (Te0 ,9Se0,1)3films. In the last development, results were used for the elaboration of thick film on structured silicon wafer which surface is about 1 dm,? alloying the elaboration of Peltier modules.