| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Semenova, Elizaveta
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024InAs(P)/InP QDs as sources of single indistinguishable photons at 1.55 µm
- 2024Experimental realization of deep sub-wavelength confinement of light in a topology-optimized InP nanocavitycitations
- 2024Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bondingcitations
- 2020Optical and electronic properties of low-density InAs/InP quantum-dot-like structures designed for single-photon emitters at telecom wavelengthscitations
- 2019Systematically Varying the Active Material Volume in a Photonic Crystal Nanolaser
- 2019Systematically Varying the Active Material Volume in a Photonic Crystal Nanolaser
- 2018Ultra-Efficient and Broadband Nonlinear AlGaAs-on-Insulator Chip for Low-Power Optical Signal Processingcitations
- 2017Mid-IR optical properties of silicon doped InPcitations
- 2016Highly doped InP as a low loss plasmonic material for mid-IR regioncitations
- 2016An Ultra-Efficient Nonlinear Platform: AlGaAs-On-Insulator
- 2013Ultrahigh-speed hybrid laser for silicon photonic integrated chips
- 2012Slow-light enhancement of spontaneous emission in active photonic crystal waveguides
- 2012Slow-light enhancement of spontaneous emission in active photonic crystal waveguides
- 2011Towards quantitative three-dimensional characterisation of InAs quantum dots
- 2011Active III-V Semiconductor Photonic Crystal Waveguidescitations
Places of action
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document
Systematically Varying the Active Material Volume in a Photonic Crystal Nanolaser
Abstract
Ultra-small and efficient laser sources is an emerging technology for realizing optical on-chip interconnects [1]. A line defect cavity formed by omitting a number of holes in a photonic crystal membrane with embedded quantum dot or quantum well gain material shows promise as a candidate for realizing lasers with small mode volumes and low threshold powers, while allowing direct modulation at several gigabits per second [2]. Further, the slow-light phenomena occurring in passive line defect photonic crystal waveguides results in enhanced gain [3]. As such the gain material is a key component of the nanolaser. For good thermal operation of the nanolaser the gain material is embedded in an InP membrane [4] which in turn makes optical characterization of the gain material difficult.<br/><br/>