| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Yvind, Kresten
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024InAs(P)/InP QDs as sources of single indistinguishable photons at 1.55 µm
- 2024Experimental realization of deep sub-wavelength confinement of light in a topology-optimized InP nanocavitycitations
- 2024Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bondingcitations
- 2019Systematically Varying the Active Material Volume in a Photonic Crystal Nanolaser
- 2019Systematically Varying the Active Material Volume in a Photonic Crystal Nanolaser
- 2019Doping technologies for InP membranes on silicon for nanolaserscitations
- 2019Doping technologies for InP membranes on silicon for nanolaserscitations
- 2018Ultra-Efficient and Broadband Nonlinear AlGaAs-on-Insulator Chip for Low-Power Optical Signal Processingcitations
- 2016An Ultra-Efficient Nonlinear Platform: AlGaAs-On-Insulator
- 2014All-Optical Signal Processing using Silicon Devicescitations
- 2013Ultrahigh-speed hybrid laser for silicon photonic integrated chips
- 2012Slow-light enhancement of spontaneous emission in active photonic crystal waveguides
- 2012Slow-light enhancement of spontaneous emission in active photonic crystal waveguides
- 2011Towards quantitative three-dimensional characterisation of InAs quantum dots
- 2011Active III-V Semiconductor Photonic Crystal Waveguidescitations
- 2010Enhanced amplified spontaneous emission in III-V semiconductor photonic crystal waveguides
- 2005Monolithic mode-locked lasers with deeply dry etched Bragg mirror
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conferencepaper
Towards quantitative three-dimensional characterisation of InAs quantum dots
Abstract
InAs quantum dots (QDs) grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such QDs are highly dependent on their three-dimensional structural and chemical profiles. Whilst conventional transmission electron microscopy (TEM) techniques can be used to study capped QDs in plan-view or cross-sectional geometries, the resulting images can provide ambiguous information about their three-dimensional properties. Here, we describe an approach for investigating the applicability of both high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) tomography and atom probe tomography (APT) to the study of surface and buried InAs/InGaAsP QDs grown by metal organic vapour phase epitaxy (MOVPE). Electron tomography was carried out in an FEI Titan TEM instrument operated at 300 kV. TEM specimens were prepared in plan-view geometry using mechanical grinding, polishing and Ar ion milling. Both original HAADF STEM images and final tomographic reconstruction of surface QDs suggest an elongated hexagonal shape for the bases of the QDs (Figure 1). The elongation direction was determined to be [110], using selected area electron diffraction and atomic force microscopy. The HAADF STEM images also suggest that surface QDs have a double-terraced geometry, with steeper facets around their bases and shallower facets close to their tops. This geometry is consistent with a theoretical model of InAs QDs formed on an InGaAs substrate that is lattice matched to InP [1] shown in Figure 1(b). Despite the large inner detector semi-angle used (approximately 50 mrad), strong diffraction effects were present in the original tilt series of HAADF STEM images, resulting in departure from the projection requirement for electron tomography, which states that the recorded intensity should be a monotonic function of a property of the object [2]. These diffraction effects are likely to be associated with ...