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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jansen, Henricus V.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2013Fabrication of 3D fractal structures using nanoscale anisotropic etching of single crystalline siliconcitations
- 2010Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabricationcitations
- 2009Characterization of MEMS-on-tube assembly: reflow bonding of borosilicate glass (Duran ®) tubes to silicon substratescitations
- 2008Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithographycitations
- 2008Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon
- 2007Simple technique for direct patterning of nanowires using a nanoslit shadow-maskcitations
- 2006Polymeric microsieves produced by phase separation micromoldingcitations
- 2006Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a maskcitations
- 2005Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask
- 2003Wet anisotropic etching for fluidic 1d nanochannelscitations
- 2002Wet anisotropic etching for fluidic 1D nanochannels
- 2000High resolution powder blast micromachiningcitations
- 2000Mask materials for powder blastingcitations
Places of action
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document
Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon
Abstract
A new nanofabrication scheme is presented to form stamps useful in thermal nanoimprint lithography (T-NIL). The stamp is created in <110> single crystalline silicon using a full wet etching procedure including local oxidation of silicon (LOCOS)and employing an adapted edge lithography technique on top of conventional photolithography. Ridges down to 10 nm in width have been produced. The silicon ridges have no inbuilt stress and are therefore less fragile than previously fabricated oxide ridges. The ridge sample is used as a template in T-NIL and a full 100 mm wafer size imprint has been successfully carried out in both polymethylmethacrylate (PMMA) and mr-I 7020E polymer. Moreover, the imprinted pattern in PMMA is subsequently transferred into a device wafer