| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Huskens, Jurriaan
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Solvent Optimization Studies for a New EURO-GANEX Process with 2,2'-Oxybis(<i>N,N</i>-di-<i>n</i>-decylpropanamide) (mTDDGA) and Its Radiolysis Productscitations
- 2017Highly doped silicon nanowires by monolayer dopingcitations
- 2013Symmetric Large-Area Metal-Molecular Monolayer-Metal Junctions by Wedging Transfercitations
- 2011Local Doping of Silicon Using Nanoimprint Lithography and Molecular Monolayerscitations
- 2010Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabricationcitations
- 2010Visualizing resonance energy transfer in supramolecular surface patterns of β-CD-functionalized quantum dot hosts and organic dye guests by fluorescence lifetime imagingcitations
- 2009Microcontact Printing of Dendrimers, Proteins, and Nanoparticles by Porous Stampscitations
- 2008Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithographycitations
- 2008Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon
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document
Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon
Abstract
A new nanofabrication scheme is presented to form stamps useful in thermal nanoimprint lithography (T-NIL). The stamp is created in <110> single crystalline silicon using a full wet etching procedure including local oxidation of silicon (LOCOS)and employing an adapted edge lithography technique on top of conventional photolithography. Ridges down to 10 nm in width have been produced. The silicon ridges have no inbuilt stress and are therefore less fragile than previously fabricated oxide ridges. The ridge sample is used as a template in T-NIL and a full 100 mm wafer size imprint has been successfully carried out in both polymethylmethacrylate (PMMA) and mr-I 7020E polymer. Moreover, the imprinted pattern in PMMA is subsequently transferred into a device wafer