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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bishop, David
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document
Riveting 2D Materials: MEMS Strained MoS<SUB>2</SUB> in Excess of 1% and Future Outlooks
Abstract
Despite their unsurpassed tensile strength and unique strain-dependent electronic, optical and thermal properties, strain-based 2D material devices have yet to take the significant step from lab to ubiquitous technology. Here, we present the integration of 2D materials with microelectromechanical systems (MEMS) as the platform for applying strain. Such implementation allows strain-emergent phenomena to be accessible in a way that could be easily integrated into devices. We report on the use of MEMS to strain MoS<SUB>2</SUB> to greater than 1% strain for the first time, as confirmed through both micro-Raman and Photoluminescence. One of the major hurdles to successful integration is anchoring the material to avoid slipping. This milestone was achieved through the development of a specialized polymer-assisted 2D material transfer technique, and the use of micro-riveting to anchor the 2D material in place. Our framework opens the doors for investigation of different strain-dependent phenomena such as electrical transport, pseudomagnetic field generation, and generating strain fields with great potential for novel electronic properties. <P />This work is supported by NSF DMR Grant 1411008. M. Vutukuru thanks the BUnano Fellowship for their support. ....