• Echeverria, Karla
• Fernandez, Felix
• Lysenko, Sergyi
• Nieves, Christian

Abstract

V3O5 is an interesting material which exhibits an insulator-to-metal transition near to 430 K. Its relatively high temperature transition makes it valuable in complementary metal-oxide-semiconductor (CMOS) devices. However, the amount of information documenting its mechanical properties is quite limited. Young’s modulus of sputtered deposited V3O5 thin films has been determined by measuring the fundamental resonant frequency of silicon microcantilevers coated with V3O5. The films were then characterized by four-point probe electrical resistivity measurements, Raman Spectroscopy, X-ray diffraction, atomic force microscopy and laser deflection techniques, which were used to measure the cantilevers’ resonant frequencies. The value of Young’s modulus was found to be approximately 160 GPa. In future work, it should be of interest to extend these measurements to thicker films and to compare the results, which could be obtained with other techniques, such as nanoindentation, with these.

Topics

• impedance spectroscopy
• resistivity
• x-ray diffraction
• thin film
• atomic force microscopy
• semiconductor
• nanoindentation
• Silicon
• Raman spectroscopy