| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sen, Sudipta
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2022Evaluation of Richardson Constant of Fruit dyes using Carmoisine and Tartrazinecitations
- 2021Modification of barrier height and depletion layer width of methyl red (MR) dye-based organic device in the presence of single-walled carbon nanotubes (SWCNT)
- 2020Effect of Different Sized Multi Walled Carbon Nanotubes on the Barrier Potential and Trap Concentration of Malachite Green Dye Based Organic Devicecitations
- 2020Correlation between barrier potential and charge trapping under the influence of Titanium Di oxide nanomaterials in organic devicescitations
- 2020Study on the Effect of Zinc Oxide Nanoparticles on Injection Barrier Height of Crystal Violet Dye Based Organic Device
- 2019Effect of Carboxyl-Functionalized Single Walled Carbon Nanotubes on the Interfacial Barrier Height of Malachite Green Dye Based Organic Devicecitations
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article
Modification of barrier height and depletion layer width of methyl red (MR) dye-based organic device in the presence of single-walled carbon nanotubes (SWCNT)
Abstract
In this paper, barrier height ({{{b}}}) and depletion layer width (Wd) of ITO-coated glass/Methyl Red (MR) dye/Aluminum (Al)-based organic device have been studied, and effect of single-walled carbon nanotubes (SWCNT) on both of these parameters has been observed. ITO-coated glass as front electrode and Aluminum as back electrode are used to form the device by using spin coating technique. {{{b}}}is calculated by analyzing both I–V and C–V characteristics. In the presence of SWCNT, {{{b }}}is reduced from 0.870 ± 0.05 eV to 0.754 ± 0.05 eV in I–V characteristics and from 0.850 ± 0.12 eV to 0.784 ± 0.12 eV in C–V characteristics. {{{b }}}is also estimated by Norde method, which shows the presence of SWCNT lowers the value of {{{b }}}from 0.852 eV to 0.738 eV. Wd has been calculated from C–V characteristics. With SWCNT, value of Wd reduces from (8.74 ± 0.02) × 10−6 cm to (7.85 ± 0.02) × 10−6 cm. Threshold voltage also decreases from 2.52 V to 1.99 V in the presence of SWCNT. Addition of SWCNT within device ameliorates charge injection by lessening {{{b}}}and Wd of the device.