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Plakhotnyuk, Maksym
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conferencepaper
Behind the Nature of Titanium Oxide Excellent Surface Passivation and Carrier Selectivity of c-Si
Abstract
We present an expanded study of the passivation properties of titanium dioxide (TiO<sub>2</sub>) on p-type crystalline silicon (c-Si). We report a low surface recombination velocity (16 cm/s) for TiO<sub>2</sub> passivation layers with a thin tunnelling oxide interlayer (SiO<sub>2</sub> or Al<sub>2</sub>O<sub>3</sub>) on p-type crystalline silicon (c-Si). The TiO<sub>2</sub> films were deposited by thermal atomic layer deposition (ALD) at temperatures in the range of 80-300 ̊C using titanium tetrachloride (TiCl<sub>4</sub>) as Ti precursor and water as the oxidant. The influence of TiO<sub>2</sub> thickness (5, 10, 20 nm), presence of additional tunneling interlayer (SiO<sub>2</sub> or Al<sub>2</sub>O<sub>3</sub>), and post-deposition annealing temperature were investigated.<br/>We have observed that that SiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> interlayers enhance the TiO<sub>2</sub> passivation of c-Si. TiO2 thin film passivation layers alone result in lower effective carrier lifetime. Further annealing at 200 ̊C in N<sub>2</sub> gas enhances the surface passivation quality of TiO<sub>2</sub> tremendously.