| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ettlinger, Rebecca Bolt
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2018Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfercitations
- 2018Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfercitations
- 2017Temperature dependent photoreflectance study of Cu2SnS3 thin films produced by pulsed laser depositioncitations
- 2016CTS and CZTS for solar cells made by pulsed laser deposition and pulsed electron deposition
- 2015Pulsed laser deposition from ZnS and Cu 2 SnS 3 multicomponent targetscitations
- 2015Optical properties and surface characterization of pulsed laser-deposited Cu2ZnSnS4 by spectroscopic ellipsometrycitations
- 2015Pulsed laser deposition from ZnS and Cu2SnS3 multicomponent targetscitations
- 2015Chalcogenide compounds made by pulsed laser deposition at 355 and 248 nm
- 2015Morphology of Copper Tin Sulfide Films Grown by Pulsed Laser Deposition at 248 and 355 nm
- 2015Optical properties and surface characterization of pulsed laser-deposited Cu 2 ZnSnS 4 by spectroscopic ellipsometrycitations
- 2015ZnS top layer for enhancement of the crystallinity of CZTS absorber during the annealingcitations
- 2014Thin films of absorber material Cu2ZnSnS4 for solar cells
- 2014Optical properties and secondary phase identification in PLD-grown Cu 2 ZnSnS 4 for thin-film photovoltaics
- 2014Optical properties and secondary phase identification in PLD-grown Cu2ZnSnS4 for thin-film photovoltaics
- 2014Nanosecond laser ablation and deposition of silver, copper, zinc and tincitations
- 2014Pulsed laser deposition of Cu-Sn-S for thin film solar cells
Places of action
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document
Optical properties and secondary phase identification in PLD-grown Cu2ZnSnS4 for thin-film photovoltaics
Abstract
One major hurdle to production of Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) thin films for photovoltaic applications is the narrow phase diagram region in which CZTS is expected as a single phase at most temperatures of interest. Unwanted secondary phases such as ZnS, CuxSnSx+1 and SnxSy are thus likely to be included in CZTS films independently of the chosen deposition technique. Identification by standard X-ray diffraction (XRD) of some of those phases is challenging since their diffraction peaks overlap with CZTS peaks. In this study we employ Raman spectroscopy to determine which secondary phases are incorporated in CZTS films grown by pulsed laser deposition (PLD) for a range of laser energies and substrate temperatures. Film properties, such as absorption coefficient, refraction index and thickness are extracted from ellipsometry measurements. The same set of properties is evaluated for chemical-bath-deposited CdS due to its important use as a buffer layer in chalcogenide solar cells. The validity of the optical model used to derive optical constants by ellipsometry is discussed in relation to results from direct measurement methods such as UV-visible spectroscopy, Scanning Electron Microscopy (SEM) and profiling. Identification of secondary phases in CZTS films under different PLD process parameters and their effect on optical constants is an important factor in optimizing the deposition process for production of high-efficiency CZTS solar cells.