| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Rodriguez, Jean-Baptiste
French National Centre for Scientific Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024III-V/Si epitaxial growth and antiphase domains: a matter of symmetry
- 2024Kinetic Monte Carlo simulation of GaAs growth on (001) Silicon
- 2024Understanding III-V/Si Heteroepitaxy: Experiments and Theory
- 2022Mid-infrared III–V semiconductor lasers epitaxially grown on Si substratescitations
- 2022Mid-infrared III–V semiconductor lasers epitaxially grown on Si substratescitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2022Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2021GaSb-based laser diodes grown on MOCVD GaAs-on-Si templatescitations
- 2021GaSb-based laser diodes grown on MOCVD GaAs-on-Si templatescitations
- 2021Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Siliconcitations
- 2020Zinc-blende group III-V/group IV epitaxy: Importance of the miscutcitations
- 2020Mid-infrared laser diodes epitaxially grown on on-axis (001) siliconcitations
- 2019The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substratescitations
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2018Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor depositioncitations
- 2015Terahertz studies of 2D and 3D topological transitions
- 2014Silicon-based photonic integration beyond the telecommunication wavelength rangecitations
- 2014Mid-IR heterogeneous silicon photonicscitations
- 2013Integrated thin-film GaSb-based Fabry-Perot lasers: towards a fully integrated spectrometer on a SOI waveguide circuitcitations
Places of action
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document
A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
Abstract
In this work, we experimentally and theoretically clarify the III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at theearly stages of AlSb, AlN and GaP molecular beam epitaxy on Si, independently of strain. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems, this conclusion being reinforced when pretreatment of the Si surface is performed. Surface/interface contributions to the free energy changes are found to be prominent over strain relief processes. We finally propose a universal description of III-V/Si growth processes, including the description of antiphase boundaries formation.