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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dushaq, Ghada
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Publications (7/7 displayed)
- 2022Exceptionally high work density of a ferroelectric dynamic organic crystal around room temperaturecitations
- 2020Strong enhancement of direct transition photoluminescence at room temperature for highly tensile-strained Ge decorated using 5 nm gold nanoparticlescitations
- 2020Tuning the photoluminescence of few-layer MoS2nanosheets by mechanical nanostamping for broadband optoelectronic applicationscitations
- 2019Hexagonal germanium formation at room temperature using controlled penetration depth nano-indentationcitations
- 2019Integration of metal- GaAs -Metal photodetectors on si using thin ge buffer layers for applications in visible photonics
- 2018Passivation of Ge/high-κ interface using RF Plasma nitridationcitations
- 2017Germanium MOS capacitors grown on Silicon using low temperature RF-PECVDcitations
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document
Integration of metal- GaAs -Metal photodetectors on si using thin ge buffer layers for applications in visible photonics
Abstract
<p>Monolithic integration of III-V materials on silicon appears as the most promising, cost-effective and versatile method for the next generation of optoelectronic devices [1-3]. Several research efforts have been devoted to understand the epitaxial growth of high quality III-V semiconductor on low cost Si substrates. However, the growth process has proven difficult due to number of fundamental problems. Thus, it is essential to develop a growth process that produces III-V films with low surface roughness and an acceptable defect density at low deposition temperature. In this work we demonstrate GaAs metal-semiconductor-metal photodetector (MSM PD) epitaxially grown on Si. The growth of GaAs is carried out using the low temperature thin Ge interlayers which was previously demonstrated [4]. In the present device architecture, a two-step direct growth of Ge-on-Si acts as a “virtual” substrates to reduce the overall threading dislocation density in the GaAs device layers.</p>