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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Alias, Afishah
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Topics
Publications (12/12 displayed)
- 2020Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature
- 2018Electrical simulation of different photoactive layer thickness on organic heterojunction solar cellcitations
- 2017Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diodecitations
- 2017The Structural and Optical Properties of Poly(Triarylamine) (PTAA) Thin Films Prepared at Different Spin Rate Using Spin Coating Methodcitations
- 2016Annealing heat treatment of Poly(triarylamine) (PTAA) thin films deposited using spin coating
- 2015GROWTH CHARACTERISTIC OF GZO FILM FABRICATED BY RF MAGNETRON SPUTTERING
- 2015Structural properties 3,16-bis triisopropylsilylethynyl (pentacene) (TIPS-pentacene) thin films onto organic dielectric layer using slide coating method
- 2015PREPARATION AND CHARACTERIZATION OF CARBON NANOFIBERS / METAKAOLIN GEOPOLYMER BASED NANOCOMPOSITE
- 2015Fabrication and characterization of 6,13-bis(triisopropylsilylethynyl)-pentacene active semiconductor thin films prepared by flow-coating methodcitations
- 2015EFFECT OF SPUTTERING PRESSURE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZNO FILMS DEPOSITED ON FLEXIBLE SUBSTRATEcitations
- 2013Effect of [6,6]-Phenyl-C 61 butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistorscitations
- 2011Fabrication of ZnO Thin-Film Transistors by Chemical Vapor Deposition Method using Zinc Acetate Solutioncitations
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document
Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature
Abstract
Zinc Oxide (ZnO) and Magnesium Zinc Oxide (MgZnO) had received much attention in photoelectronic devices. The current study is performed to investigate the effect of temperature on the structural and optical properties of ZnO and MgZnO with 99.99% purity, deposited on Indium Tin Oxide (ITO) glass using Radio Frequency (RF) magnetron sputtering technique. The Argon flow into the chamber is 10 sccm with a deposition rate of 0.25± 0.1 kA/s, working pressure 4.5 x 10-3 Torr, gas and RF power of 100 watt. Structural analysis using X-Ray Diffraction (XRD) shows that when the temperature increase, the diffraction peak intensity and grain size increase while the deposition time at 30 minutes shows the best intensity. The grain size of ZnO and MgZnO is 0.362 nm and 0.195 nm at 300o C respectively. This shows that the full width half maximum (FWHM) of ZnO is smaller compared to MgZnO. The optical transparency value from UV-Vis spectrophotometer is 78% for ZnO while MgZnO showing 80%. This shows that optical transmittance of MgZnO is slightly higher than ZnO.