| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Bid, Aveek
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022Observation of hidden electronic phases in 1T-TaS<SUB>2</SUB> through conductance fluctuation spectroscopy
- 2022Observation of Quantum Griffith's singularity and anomalous metal in LaScO<SUB>3</SUB>/SrTiO<SUB>3</SUB> heterostructure
- 2022Temperature dependent cloaking of the Quantum Griffiths Singularity in LaScO$_3$/SrTiO$_3$ heterostructures
- 2019Resistance fluctuation spectroscopy of thin films of 3D topological insulator BiSbTeSe<SUB>1.6</SUB>citations
- 2018Strain-induced continuous transition from Weak localization regime to Strong localization regime in a doped Mott Insulator
- 2017Effect of microstructure on the electronic transport properties of epitaxial CaRuO<SUB>3</SUB> thin filmscitations
- 2016Structural instability and phase co-existence driven non-Gaussian resistance fluctuations in metal nanowires at low temperaturescitations
- 2014Probing a spin-glass state in SrRuO<SUB>3</SUB> thin films through higher-order statistics of resistance fluctuationscitations
- 2005Experimental study of Rayleigh instability in metallic nanowires using resistance fluctuations measurements from 77K to 375Kcitations
Places of action
| Organizations | Location | People |
|---|
document
Strain-induced continuous transition from Weak localization regime to Strong localization regime in a doped Mott Insulator
Abstract
We report electrical transport properties of the Nd0.7La<SUB>0.3</SUB>NiO<SUB>3</SUB> films (thickness 80 nm) measured down to 300 mK which were grown on LaAlO<SUB>3</SUB>(100), SrTiO<SUB>3</SUB>(100), and NdGaO<SUB>3</SUB> (100) single crystal substrates by pulsed laser deposition. We show that strain/strain inhomogeneity induced by the substrates can lead to a continuous transition from the weak localized regime to a strong localized regime and likelihood of occurrence of a non- Fermi liquid behavior. We observed that the metallic state of a film under compressive strain shows the non- Fermi liquid behavior while the film that experiences a tensile strain shows a metal-insulator transition and a Fermi liquid behavior. The disorder induced continuous transition has been proposed in the context of half-filled Anderson Hubbard model at a finite temperature where the quenched disorder as well auxiliary field fluctuations is responsible for non-Fermi liquid scaling <SUP>1</SUP> . It is likely that strain inhomogeneity in such films acts as a quenched disorder. References1. Niravkumar D. Patel, Anamitra Mukherjee, Nitin Kaushal, Adriana Moreo, and Elbio Dagotto, Phys. Rev. Lett. 119, 086601 (2017). <P />The authors acknowledge the financial support from the Department of Science and Technology, India....