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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Sruthi, S.
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document
Observation of hidden electronic phases in 1T-TaS<SUB>2</SUB> through conductance fluctuation spectroscopy
Abstract
Transition metal dichalcogenides have drawn the attention of the research community as they host multiple, competing electronic phases. One of the most studied materials is 1T-TaS<SUB>2</SUB> which has a multitude of electronically and structurally distinct phases. For example, the collapse of the low-temperature stable commensurate charge density wave (CCDW) phase under various perturbations leads to the appearance of metastable phases is a big puzzle. Using lateral strain as a tuning parameter we probe the effect of varying the interlayer coupling strength on the electronic phases in few-layer 1T-TaS<SUB>2</SUB>. We observe the co-existence of insulating and metallic phases deep within the CCDW phase. Through detailed conductance fluctuation spectroscopy of the electronic ground state, we establish that the mixed-phase consists of insulating regions surrounded by one-dimensional metallic domain walls. Our study raises the prospect of using 1T-TaS<SUB>2</SUB> as a prospect for strain-based devices....