| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pichon, Laurent
Institut d'Électronique et des Technologies du numéRique
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2022Comparative study on quantitative carbon content mapping in archaeological ferrous metals with laserinduced plasma spectroscopy (LIBS) and nuclear reaction analysis (NRA) for 3D representation by LIBScitations
- 2021In-depth analysis of electrical characteristics for polycrystalline silicon vertical thin film transistorscitations
- 2019Industrial production of white earthenware in the Johnston-Vieillard manufactory (19th century): recipes evolution and production strategies
- 2009Fabrication of polycrystalline silicon nanowires using conventional UV lithography
- 2009Improvement in the determination by 1/f noise measurements of the interface state distribution in polysilicon TFTs in relation with the compensation law of Meyer Neldelcitations
- 2008Low frequency Noise in Polysilicon Thin Film Transistors: Effect of the Laser Annealing of the Active Layer
- 2004Compatibility of p-metal oxide semiconductor technology with the epitaxial YBa2CU3O7-delta growth on Si
- 2001Thin film transistors fabricated by in-situ doped unhydrogenated polysilicon films obtained by solid phase crystallization
Places of action
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article
Low frequency Noise in Polysilicon Thin Film Transistors: Effect of the Laser Annealing of the Active Layer
Abstract
Low-frequency noise is studied in N-channel polysilicon TFTs issued from two (low temperature ≤ 600°C) technologies: fur-nace solid phase crystallized (FSPC) and laser solid phase crystallized (LSPC) TFTs. The distribution of the trap states (DOS) into the polysilicon bandgap determined for devices biased in the weak inversion is one decade lower for LSPC devices. The high range values (10<sup>-4</sup> ≤ α ≤ 1) of the measured macroscopic noise parameter, defined according to the Hooge empirical re-lationship, are explained by the drain current crowding due to structural defects within the active layer. The higher values of α for the LSPC TFTs are attributed to a better structural quality of the active layer.