| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bose, Sourav
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Structural, optical and electrical properties of single-phase wurtzite ZnMgAlO thin films deposited by ultrasonic spray pyrolysiscitations
- 2022Development and Study of Earth-Abundant Oxide Based Thin Films for Solar Cells by Ultrasonic Spray Pyrolysis : From Unbeknownst to Erudite Processes ; Élaboration et étude de couches minces à base d'oxydes d'éléments abondants pour le photovoltaïque par spray pyrolyse ultrasonique
- 2021Ultrasonic spray pyrolysis deposition of cuprous oxide thin films: Microstructure and optical investigations
- 2021Effect of the precursor concentration on structural properties of ZnO thin films by ultrasonic spray pyrolysis
- 2021Elaboration of high-transparency ZnO thin films by ultrasonic spray pyrolysis with fast growth ratecitations
- 2020Optical Lithography Patterning of SiO 2 Layers for Interface Passivation of Thin Film Solar Cellscitations
- 2020Development of InGaN based solar cells: present status and challenges
- 2020Development of InGaN based solar cells: present status and challenges
- 2019Rear Optical Reflection and Passivation Using a Nanopatterned Metal/Dielectric Structure in Thin-Film Solar Cellscitations
- 2018Optical Lithography Patterning of SiO<sub>2</sub> Layers for Interface Passivation of Thin Film Solar Cellscitations
- 2018Optical Lithography Patterning of SiO2 Layers for Interface Passivation of Thin Film Solar Cellscitations
Places of action
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document
Development of InGaN based solar cells: present status and challenges
Abstract
The Indium Gallium Nitride (InGaN) alloy has the required potentialities to be a material of choice used in the next generation high efficiency solar cells. Indeed, the mere change in its Indium composition allows its absorption to cover the whole solar spectrum. The other main advantages of InGaN, in addition to its tunable bandgap, are a high absorption coefficient, a high stability and radiation tolerance. However, challenging issues remain to address: (i) the difficulty to elaborate sufficiently thick monocrystalline InGaN layers with a high Indium content; (ii) the high defects density and the spontaneous and piezoelectric polarizations; (iii) the p-doping which remains difficult to master. A review of this promising technology for solar cells is provided and present challenges and future perspectives are presented, including the use of InGaN multijunction structures and a new InGaN Schottky Based Solar Cells (SBSC) structure.