| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Fressengeas, Nicolas
Institut Jean Lamour
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Structural, optical and electrical properties of single-phase wurtzite ZnMgAlO thin films deposited by ultrasonic spray pyrolysiscitations
- 2023Development of a two-step process based on ultrasonic spray pyrolysis to optimize optical and electrical properties of ZnMgAlO
- 2021The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructurescitations
- 2021The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructurescitations
- 2021Ultrasonic spray pyrolysis deposition of cuprous oxide thin films: Microstructure and optical investigations
- 2021Effect of the precursor concentration on structural properties of ZnO thin films by ultrasonic spray pyrolysis
- 2021Elaboration of high-transparency ZnO thin films by ultrasonic spray pyrolysis with fast growth ratecitations
- 2020Development of InGaN based solar cells: present status and challenges
- 2020Development of InGaN based solar cells: present status and challenges
- 2019Numerical investigations of the impact of low cost fabrication of Cu2O on solar cell performances
- 2019Numerical investigations of the impact of low cost fabrication of Cu2O on solar cell performances
- 2017Effect of Interface Properties on the Electrical Characteristics of InGaN-based Multijunction Solar Cell
- 2017Effect of Interface Properties on the Electrical Characteristics of InGaN-based Multijunction Solar Cell
Places of action
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document
Development of InGaN based solar cells: present status and challenges
Abstract
The Indium Gallium Nitride (InGaN) alloy has the required potentialities to be a material of choice used in the next generation high efficiency solar cells. Indeed, the mere change in its Indium composition allows its absorption to cover the whole solar spectrum. The other main advantages of InGaN, in addition to its tunable bandgap, are a high absorption coefficient, a high stability and radiation tolerance. However, challenging issues remain to address: (i) the difficulty to elaborate sufficiently thick monocrystalline InGaN layers with a high Indium content; (ii) the high defects density and the spontaneous and piezoelectric polarizations; (iii) the p-doping which remains difficult to master. A review of this promising technology for solar cells is provided and present challenges and future perspectives are presented, including the use of InGaN multijunction structures and a new InGaN Schottky Based Solar Cells (SBSC) structure.