| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Han, Yisong
University of Warwick
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Block copolymer synthesis in ionic liquid via polymerisation-induced self-assembly: A convenient route to gel electrolytescitations
- 2024Electrodeposition of 2D layered tungsten diselenide thin films using a single source precursorcitations
- 2022Mesoporous silica films as hard templates for electrodeposition of nanostructured goldcitations
- 2022Vertical and Lateral Electrodeposition of 2D Material Heterostructures
- 2022Influence of extrusion parameters on filled polyphenylsulfone tufting yarns on open-hole tensile strengthcitations
- 2021Electrodeposited WS 2 monolayers on patterned graphenecitations
- 2021Lateral growth of MoS2 2D material semiconductors over an insulator via electrodepositioncitations
- 2021Lateral growth of MoS 2 2D material semiconductors over an insulator via electrodepositioncitations
- 2020Large-area electrodeposition of few-layer MoS2 on graphene for 2D material heterostructurescitations
- 2020Data for Atomic level termination for passivation and functionalisation of silicon surfaces
- 2020Large-area electrodeposition of few-layer MoS 2 on graphene for 2D material heterostructurescitations
- 2020Atomic level termination for passivation and functionalisation of silicon surfacescitations
- 2019Generation of maghemite nanocrystals from iron–sulfur centrescitations
- 2016Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
- 2016Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.
- 2016Toward defect-free semi-polar GaN templates on pre-structured sapphirecitations
- 2015Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.
Places of action
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document
Vertical and Lateral Electrodeposition of 2D Material Heterostructures
Abstract
Developing scalable techniques for growing 2D materials and their heterostructures is a major challenge that needs to be overcome before these materials can make an impact in industries. Electroplating (electrodeposition) is an industrially acceptable deposition technique that offers unique advantages. This work is divided into two main parts. First, we demonstrate controlled electrodeposition of uniform and continuous MoS2 and WS2 layers over a large-area and micropatterned graphene electrodes. Second, we present a novel electrode design that enables MoS2 to be grown laterally over insulating substrates, demonstrating lateral photodetector devices based on TiN/MoS2/TiN structure. Our goal is to show that electrodeposition can produce competitive quality of 2D materials which can potentially be scaled to wafer sizes in fabrication industries for device applications.