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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Österbacka, Ronald
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2021Fluorination of pyrene-based organic semiconductors enhances the performance of light emitting diodes and halide perovskite solar cellscitations
- 2020Fluorination of pyrene-based organic semiconductors enhances the performance of light emitting diodes and halide perovskite solar cellscitations
- 2020Fluorination of pyrene-based organic semiconductors enhances the performance of light emitting diodes and halide perovskite solar cellscitations
- 2020Investigation of well-defined pinholes in TiO 2 electron selective layers used in planar heterojunction perovskite solar cellscitations
- 2020Investigation of well-defined pinholes in TiO2 electron selective layers used in planar heterojunction perovskite solar cellscitations
- 2019Eco-friendly and low-cost phenothiazine-based hole-transporting material for high performance perovskite solar cells
- 2017Impact of Film Thickness of Ultrathin Dip-Coated Compact TiO2 Layers on the Performance of Mesoscopic Perovskite Solar Cellscitations
- 2014Impact of humidity on functionality of on-paper printed electronicscitations
- 2013Printability of functional inks on multilayer curtain coated papercitations
- 2012IR-sintering of ink-jet printed metal-nanoparticles on papercitations
- 2011Towards paper electronics - printing transistors on paper in a roll-to-roll process
- 2010Organic Spintronicscitations
- 2008Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphologycitations
- 2008Roll-to-Roll Fabrication of Bulk Heterojunction plastic solar cells using the reverse gravure coating techniquecitations
- 2008Organic memory using [6,6]-phenyl-C 61 butyric acid methyl ester:Morphology, thickness and concentration dependence studiescitations
- 2008Roll-to-roll fabrication of bulk heterojunction plastic solar cells using the reverse gravure coating techniquecitations
- 2007Metallic nanoparticles in a polymeric matrix
- 2007Metallic nanoparticles in a polymeric matrix:Electrical impedance switching and negative differential resistance
- 2005A novel method to orient semiconducting polymer filmscitations
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document
Metallic nanoparticles in a polymeric matrix
Abstract
Future organic electronic and nanoelectronic applications will needorganic memories as the devices and circuits get more complex. However, untilvery recently there has been limited research on the subject. Recentdiscoveries allow organic bistable devices to be used for nonvolatile memoryapplications [1]. We present a memory device concept that utilizes metallicnanoparticles dispersed in an insulating matrix. The simple structure allowsone-step active layer deposition and thus paves the way for roll-to-rollprocessing.The main objective of this work is to develop memory units that can bemanufactured in a rapid and economical fashion. The printing process offerstools for this purpose, but requires air-stable materials. Thus the use ofgold nanoparticles (Figure 1) in a polystyrene matrix is a feasiblealternative. However, other materials are also investigated.Figure 1: Gold nanoparticle with polystyrene tails (left) and a TEM picture,which shows that the particles are evenly distributed in the polymer matrix(right).Even distribution of nanoparticles is a requirement for optimal deviceoperation. The TEM picture in Figure 1 shows that the gold particles spreadevenly in the matrix. A resistance switching phenomenon can be observed inthis nanoscale composite when contacted in a sandwich structure. Although theswitching is still inconsistent, the negative differential resistance isconsistent, which can also be utilized in a memory device. (Figure 2)Figure 2: I-V characteristics of a Au-particle memory device.1. Himadri S. Majumdar, Jayanta K. Baral, Ronald Österbacka, Olli Ikkala, andHenrik Stubb, Fullerene-based bistable devices and associatednegative-differential-resistance effect, Organic Electronics 6 (2005) 188-192.