| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sahdan, Mohd Zainizan
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Topics
Publications (12/12 displayed)
- 2018Mechanism of room temperature oxygen sensor based on nanocrystalline TiO2 filmcitations
- 2018Difference in structural and chemical properties of sol–gel spin coated Al doped TiO2, Y doped TiO2 and Gd doped TiO2 based on trivalent dopantscitations
- 2016Sputter Deposition of Cuprous and Cupric Oxide Thin Films Monitored by Optical Emission Spectroscopy for Gas Sensing Applicationscitations
- 2016Correlation between Microstructure of Copper Oxide Thin Films and its Gas Sensing Performance at Room Temperaturecitations
- 2015Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabricationcitations
- 2015Fabrication of inverted bulk heterojunction organic solar cells based on conjugated P3HT:PCBM using various thicknesses of ZnO buffer layercitations
- 2015Influence of TiO2 thin film annealing temperature on electrical properties synthesized by CVD technique
- 2014Glass etching for cost-effective microchannels fabricationcitations
- 2014Physical and optical studies on ZnO films by SOL-GELcitations
- 2013Oxide semiconductors for solar to chemical energy conversion: nanotechnology approachcitations
- 2013Morphology, topography and thickness of copper oxide thin films deposited using magnetron sputtering techniquecitations
- 2012Sol-gel Synthesis of TiO 2 Thin Films from In-house Nano-TiO 2 Powder
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document
Influence of TiO2 thin film annealing temperature on electrical properties synthesized by CVD technique
Abstract
Titanium dioxide (TiO2) thin film deposited onto a glass substrate by varying the parameter of annealing temperature using chemical vapor deposition (CVD) technique to investigate the electrical properties. TiO2 thin film annealed at the temperature of 300°C, 800°C and 1000°C before characterizations done using Atomic Force Microscope (AFM), X-Ray Diffraction (XRD), Ultraviolet-Visible spectroscopy (UV-Vis), Field Emission Scanning Electron Microscope (FE-SEM) and two point probe I-V measurement. The effects of anneal temperature on TiO2 thin film surface morphology and electrical properties were studied intensively. The results obtained indicate that when a chemical modification were done, the properties of the TiO2 thin film changed as well. From the AFM image, the roughness of TiO2 thin film surface morphology increased as the annealing temperature increased. The electrical properties on the other hand, also increased as the temperature increased. Vice versa, the resistivity of the TiO2 thin film decreased as annealing temperature increased. As expected, it is found that, heat treatment affecting TiO2 surface morphology in term of roughness and indirectly changed the resistivity of TiO2 due to the temperature applied on the thin film.