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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Frentrup, Martin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well
- 2024Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well.
- 2023Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVDcitations
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2021Defect structures in (001) zincblende GaN/3CSiC nucleation layerscitations
- 2021Defect structures in (001) zincblende GaN/3C-SiC nucleation layerscitations
- 2021The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayerscitations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wellscitations
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substratescitations
- 2019Investigation of MOVPE-grown zincblende GaN nucleation layers on 3CSiC/Si substratescitations
- 2019Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEMcitations
- 2017Photoluminescence studies of cubic GaN epilayerscitations
- 2017X-ray diffraction analysis of cubic zincblende III-nitrides
- 2015Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.
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article
X-ray diffraction analysis of cubic zincblende III-nitrides
Abstract
Solving the green gap problem is a key challenge for the development of future LED-based light systems. A promising approach to achieve higher LED efficiencies in the green spectral region is the growth of III-nitrides in the cubic zincblende phase. However, the metastability of zincblende GaN along with the crystal growth process often lead to a phase mixture with the wurtzite phase, high mosaicity, high densities of extended defects and point defects, and strain, which can all impair the performance of light emitting devices. X-ray diffraction (XRD) is the main characterization technique to analyze these device-relevant structural properties, as it is very cheap in comparison to other techniques and enables fast feedback times. In this review, we will describe and apply various XRD techniques to identify the phase purity in predominantly zincblende GaN thin films, to analyze their mosaicity, strain state, and wafer curvature. The different techniques will be illustrated on samples grown by metalorganic vapor phase epitaxy on pieces of 4'' SiC/Si wafers. We will discuss possible issues, which may arise during experimentation, and provide a critical view on the common theories. ; We would like to thank Anvil Semiconductors Ltd. for providing 3C-SiC on Si templates for our experiments, and Innovate UK for financial support within the Energy Catalyst Round 2—Early Stage Feasibility scheme (Ref. 132135): 'To demonstrate the potential to make low cost, high efficiency LEDs using 3C-SiC substrates'. S-L Sahonta and M J Kappers would also like to acknowledge the support of EPSRC through platform grant no. EP/M010589/1: 'Beyond Blue: New Horizons in Nitrides'. D J Wallis would like to acknowledge the support of EPSRC through grant no. EP/N01202X/1.