| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Majumdar, Sayani
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2023Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition processcitations
- 2023Large-area synthesis of high electrical performance MoS 2 by a commercially scalable atomic layer deposition processcitations
- 2023Large-area synthesis of high electrical performance MoS 2 by a commercially scalable atomic layer deposition processcitations
- 2022Giant magnetoresistance response in Sr 2 FeMoO 6 based organic spin valvescitations
- 2022Giant magnetoresistance response in Sr2FeMoO6 based organic spin valvescitations
- 2021Rubrene Thin Films with Viably Enhanced Charge Transport Fabricated by Cryo-Matrix-Assisted Laser Evaporationcitations
- 2019Passivation controlled field effect mobility in 2D semiconductor based FET devices for high performance logic circuit development on flexible platform
- 2019Electrochemical metallization ReRAMs (ECM) - Experiments and modellingcitations
- 2017Organic Spintronics: The First Decade and Beyondcitations
- 2016Toward Versatile Sr2FeMoO6-Based Spintronics by Exploiting Nanoscale Defectscitations
- 2015Defect induced enhanced low field magnetoresistance and photoresponse in Pr0.6Ca0.4MnO3 thin films
- 2015Interfacial properties of organic semiconductor-inorganic magnetic oxide hybrid spintronic systems fabricated using pulsed laser depositioncitations
- 2015Observation of ferromagnetic ordering in conjugated polymers exhibiting OMAR effectcitations
- 2014Comparative study of spin injection and transport in Alq3 and Co –phthalocyanine-based organic spin valvescitations
- 2013Decay in spin diffusion length with temperature in organic semiconductors:An insight of possible mechanismscitations
- 2013Effect of strain and grain boundaries on dielectric properties in La 0.7 Sr 0.3 MnO 3 thin filmscitations
- 2013Comparative Study of Persistent Photo-Induced Magnetization in Low and Intermediate Bandwidth Manganite Thin Filmscitations
- 2013Pulsed laser deposition of La1-xSrxMnO3 : thin-film properties and spintronic applicationscitations
- 2013Effect of strain and grain boundaries on dielectric properties in La 0.7Sr0.3MnO3 thin filmscitations
- 2012Stress and defect induced enhanced low field magnetoresistance and dielectric constant in La0.7Sr0.3MnO3 thin filmscitations
- 2012On the origin of decay of spin current with temperature in organic spintronic devicescitations
- 2010Organic Spintronicscitations
- 2008Effect of La(0.67)Sr(0.33)MnO(3) electrodes on organic spin valvescitations
Places of action
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document
Passivation controlled field effect mobility in 2D semiconductor based FET devices for high performance logic circuit development on flexible platform
Abstract
The family of two-dimensional transition metal dichalcogenides (TMDs) is a fertile ground for cultivating fundamental material science and emergent applications in high-performance electronics. In TMD based micro and nanoelectronic devices, passivation and doping strategies needs comprehensive study to optimize charge carrier mobility, operating points, hysteresis and long-term device stability. For devices on flexible platform, additional issues like mechanical flexibility of the passivation layer and lower thermal treatments also need considerations. In the current work, we will present our results on impact of different passivation methods, compatible with flexible platform, on the performance of CVD grown MoS2 based FET devices. Our results clearly demonstrate that only through control of passivating layer and thermal annealing treatments, it is possible to modify the field effect mobility of the devices by 3 orders of magnitude. The best mobility value arises due to strong n-doping arising from ALD grown Al2O3 layer, while alternate layers of Parylene N and Al2O3 gives best performance in terms of hysteresis and passivation, together with a positive shift in the operating point. This study provides potential direction for low thermal budget, high mechanical flexibility strategies to control carrier doping and prevent challenges like poor yield, performance degradation, irreproducibility and instability of TMD based fully integrated circuits on flexible platform.