| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Deleruyelle, Damien
Institut National des Sciences Appliquées de Lyon
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Development of ferroelectric and antiferroelectric H1-xZrxO2-based capacitors for non-volatile memories and power supply applications
- 2024Serendipity in materials science: how a simple doping leads to novel and outstanding properties in simple dielectric HfO2 !
- 2024Stabilization of low dimensional ferroelectric HfZrO2 film
- 2023How ALD deposition analysis can help PVD deposition process!
- 2023How ALD deposition analysis can help PVD deposition process!
- 2023Engineering the nano and micro structures of sputtered HfZrO2 thin films
- 2023Engineering the nano and micro structures of sputtered HfZrO2 thin films
- 2023Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitorscitations
- 2023Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitorscitations
- 2023Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity
- 2023Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity
- 2022Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties
- 2022Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layercitations
- 2022Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layercitations
- 2022A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching
- 2022A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching
- 2022How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties
- 2021Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application
- 2021Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions
- 2021Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions
- 2021Effect of bottom electrodes on HZO thin film properties
- 2021Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
- 2021Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
- 2021Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
- 2021Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions
- 2014Photo-Cross-Linked Diblock Copolymer Micelles: Quantitative Study of Photochemical Efficiency, Micelles Morphologies and their Thermal Behaviorcitations
Places of action
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document
Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications
Abstract
Thediscoveryofmemristor,theorizedin1971byL.Chua,hasledtothedevelopmentof novelartificialneuromorphicconceptsanddevices, includingferroelectric-basedones. FerroelectricTunnelJunction(FTJ)typememristorsbasedonzirconium-dopedhafniumoxide, (HZO), have recently displayed synaptic learning capabilities [1]. In addition, HZO processes are already fully compatible with silicon CMOS industry with oxide layers thinner than 10 nm. In the present work, the HZO layer is realized by room temperature magnetron sputtering of a ceramic target and subsequently crystallizedbyrapidthermalannealing[2].Thetitaniumnitride(TiN)bottom(BE)andtop (TE)electrodesarerealizedbyreactivemagnetronsputteringofatarget.Weexploredtheimpactoftheinsertionofanultra-thinbufferlayerattheHZO/TEinterfaceonthe stabilizedcrystallinephaseandmicrostructure,bandstructurealignmentandelectrical properties of thin HZO films. We investigated two materials,and. Behind the annealing processandturned intoandrespectively, following the creation of oxygen vacancies inside the HZO barrier. We exploited X-ray photoemission spectroscopy to analyse the chemistry and the electronic state of the HZO/electrode interface. X-rayreflectometry and grazing incidence X-ray diffraction were used to probe the thickness and structuralcharacteristicsoftheHZOlayer,whoseferroelectricityisassociated tothe polar orthorhombicphase.Wewilldiscussourresultsintheframeworkofstructural,chemical andphysicalpropertiesoftheferroelectric/TEinterfaceanditseffectontheelectrical properties of thin HZO-based junctions.References:[1] L. Chen et al., “Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junctionsynapses for hardware neural network applications,” Nanoscale, vol. 10, no. 33, pp.15826–15833, 2018, doi: 10.1039/c8nr04734k.[2] J. Bouaziz, P. R. Romeo, N. Baboux, and B. Vilquin, “Huge Reduction of the Wake-UpEffect in Ferroelectric HZO Thin Films,” ACS Appl. Electron. Mater., vol. 1, no. 9, pp.1740–1745, 2019, doi: 10.1021/acsaelm.9b00367.