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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Renoud, Raphaël
Nantes Université
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2022Crystallographic orientation dependence of ferroelectric domain walls in antiferroelectric lead zirconate thin filmscitations
- 2021Characterization and Performance Analysis of BST-Based Ferroelectric Varactors in the Millimeter-Wave Domaincitations
- 2020Effect of ferroelectric domain walls on the dielectric properties of PbZrO3 thin filmscitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO<sub>3</sub> thin films in the microwave frequency rangecitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO 3 thin films in the microwave frequency rangecitations
- 2016Domain wall motions in BST ferroelectric thin films in the microwave frequency rangecitations
- 2016Description of domain wall motions by the hyperbolic law
- 2016Decomposition of the different contributions to permittivity, losses, and tunability in BaSrTiO3 thin films using the hyperbolic lawcitations
- 2015Effect of Manganese Doping of BaSrTiO 3 on Diffusion and Domain Wall Pinningcitations
- 2015Temperature stable BaSrTiO3 thin films suitable for microwave applicationscitations
- 2014Dielectric long time relaxation of domains walls in PbZrTiO3 thin filmscitations
- 2014Electrophoretic deposition of BaTiO3 thin films from stable colloidal aqueous solutionscitations
- 2011The effect of Mn doping on the dielectric properties and domain wall mobility of (Ba0.8Sr0.2)TiO3 thin films
- 2011Ferroelectric thin films for mobile communication applications
- 2011Measurement and Modeling of Dielectric Properties of Pb(Zr,Ti)O-3 Ferroelectric Thin Filmscitations
- 2011Dielectric properties of PZT thin films under a low AC-electric field at different bias fields
- 2011Description of the low field nonlinear dielectric properties of ferroelectric and multiferroic materialscitations
- 2010Measurement and modelisation of dielectric properties of ferroelectrics thin layers
- 2010Description of the nonlinear dielectric properties of ferroelectrics under a weak AC-fieldcitations
- 20071-D modelisation of a BaTiO3 single crystal
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document
Description of domain wall motions by the hyperbolic law
Abstract
In ferroelectric materials, domain walls interact with lattice defects and several types of domain walls displacements can be observed. When a domain wall is trapped at a pinning point, it can “jump” to another pinning center only if the driving electric field is sufficiently high. On the contrary, if the field is too weak, the domain wall only vibrates around its equilibrium position. Thus, both situations contribute to the value of the permittivity which can be described by the hyperbolic law. This law is based on reversible and irreversible domain wall motions and allows us to dissociate the domain wall and lattice contributions from the dielectric measurements.