| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Gundel, Hartmut
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2022Crystallographic orientation dependence of ferroelectric domain walls in antiferroelectric lead zirconate thin filmscitations
- 2021Characterization and Performance Analysis of BST-Based Ferroelectric Varactors in the Millimeter-Wave Domaincitations
- 2020Effect of ferroelectric domain walls on the dielectric properties of PbZrO3 thin filmscitations
- 2014Dielectric long time relaxation of domains walls in PbZrTiO3 thin filmscitations
- 2014Electrophoretic deposition of BaTiO3 thin films from stable colloidal aqueous solutionscitations
- 2013A new method of dielectric characterization in the microwave range for high-k ferroelectric thin filmscitations
- 2012Miniaturized and Reconfigurable Notch Antennas Using a BST Thin Film Varactor
- 2011Wet chemical etching of BaSrTiO3 ferroelectric thin films for intelligent antenna application
- 2011The effect of Mn doping on the dielectric properties and domain wall mobility of (Ba0.8Sr0.2)TiO3 thin films
- 2011Ferroelectric thin films for mobile communication applications
- 2011Measurement and Modeling of Dielectric Properties of Pb(Zr,Ti)O-3 Ferroelectric Thin Filmscitations
- 2011Dielectric properties of PZT thin films under a low AC-electric field at different bias fields
- 2011Description of the low field nonlinear dielectric properties of ferroelectric and multiferroic materialscitations
- 2010Measurement and modelisation of dielectric properties of ferroelectrics thin layers
- 2010Description of the nonlinear dielectric properties of ferroelectrics under a weak AC-fieldcitations
- 2008Preparation and characterization of barium strontium titanate thin films by chemical solution depositioncitations
- 2008Influence of the morphology of Barium Strontium Titanate thin films on the ferroelectric and dielectric propertiescitations
- 20071-D modelisation of a BaTiO3 single crystal
- 2006Polymer poling characterization using Second Harmonic Generation (SHG)citations
- 2005Elaboration of strontium ruthenium oxide thin film on metal substrate by chemical solution depositioncitations
- 2003Conducting strontium ruthenium oxide interface layers for application to PZT/SrRuO3/Metal thin film capacitorscitations
Places of action
| Organizations | Location | People |
|---|
conferencepaper
Dielectric properties of PZT thin films under a low AC-electric field at different bias fields
Abstract
International audience ; Functional ferroelectric thin films present a great interest for telecommunication applications. In particular, the tunability of the dielectric constant under an applied electric field allows realizing of intelligent devices. The non linear variation of the permittivity is attributed to domain wall motion. The movement of domain walls under the influence of a low ac electric field corresponds either to a vibration around the equilibrium position (pinning center) or to a jump towards another equilibrium state. The first mechanism corresponds to a reversible process whereas the second is related to an irreversible modification of the local polarization. This results in the “hyperbolic law” for the description of the permittivity which is an improvement of the Raleight law. We present here a study of the parameters of the hyperbolic law as a function of the bias field, i.e. at different points of the hysteresis cycle. We are in particular interested by the ratio between the reversible and the irreversible contribution to the permittivity. Experiments concern the real part of the permittivity but also the imaginary part which is related to the dielectric losses phenomena.