| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Renoud, Raphaël
Nantes Université
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2022Crystallographic orientation dependence of ferroelectric domain walls in antiferroelectric lead zirconate thin filmscitations
- 2021Characterization and Performance Analysis of BST-Based Ferroelectric Varactors in the Millimeter-Wave Domaincitations
- 2020Effect of ferroelectric domain walls on the dielectric properties of PbZrO3 thin filmscitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO<sub>3</sub> thin films in the microwave frequency rangecitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO 3 thin films in the microwave frequency rangecitations
- 2016Domain wall motions in BST ferroelectric thin films in the microwave frequency rangecitations
- 2016Description of domain wall motions by the hyperbolic law
- 2016Decomposition of the different contributions to permittivity, losses, and tunability in BaSrTiO3 thin films using the hyperbolic lawcitations
- 2015Effect of Manganese Doping of BaSrTiO 3 on Diffusion and Domain Wall Pinningcitations
- 2015Temperature stable BaSrTiO3 thin films suitable for microwave applicationscitations
- 2014Dielectric long time relaxation of domains walls in PbZrTiO3 thin filmscitations
- 2014Electrophoretic deposition of BaTiO3 thin films from stable colloidal aqueous solutionscitations
- 2011The effect of Mn doping on the dielectric properties and domain wall mobility of (Ba0.8Sr0.2)TiO3 thin films
- 2011Ferroelectric thin films for mobile communication applications
- 2011Measurement and Modeling of Dielectric Properties of Pb(Zr,Ti)O-3 Ferroelectric Thin Filmscitations
- 2011Dielectric properties of PZT thin films under a low AC-electric field at different bias fields
- 2011Description of the low field nonlinear dielectric properties of ferroelectric and multiferroic materialscitations
- 2010Measurement and modelisation of dielectric properties of ferroelectrics thin layers
- 2010Description of the nonlinear dielectric properties of ferroelectrics under a weak AC-fieldcitations
- 20071-D modelisation of a BaTiO3 single crystal
Places of action
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conferencepaper
The effect of Mn doping on the dielectric properties and domain wall mobility of (Ba0.8Sr0.2)TiO3 thin films
Abstract
International audience ; Ferroelectric thin films are attractive materials for tunable microwave devices such as electrically tunable filters, capacitors, oscillators, resonators or phase shifters. For this type of application, the ferroelectric material needs to have a high dielectric permittivity and low losses. These dielectric properties are very sensitive to the quality of the material structure and more particularly to defects. In ferroelectric perovskite materials, oxygen vacancies are the most important defects that create conduction in the film. Hence the losses are important and it becomes necessary to dope the film in order to decrease the influence of the defects. In the present work, Mn-doped Ba0,80Sr0,20TiO3 (BST) thin films are realized by Chemical Solution Deposition (CSD) on stainless steel substrates. Dielectric and electrical characteristics are investigated as a function of the Mn content.