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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kroger, Roland
University of York
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2016Semiconductor-Metal Nano-Floret Hybrid Structures by Self-Processing Synthesiscitations
- 2013Microstructural evolution and nanoscale crystallography in scleractinian coral spherulitescitations
- 2013Formation and Structure of Calcium Carbonate Thin Films and Nanofibers Precipitated in the Presence of Poly(Allylamine Hydrochloride) and Magnesium Ionscitations
- 2011An artificial biomineral formed by incorporation of copolymer micelles in calcite crystalscitations
- 2008Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire
- 2008The role of anisotropy for defect properties in a-plane GaN
- 2008The role of anisotropy for the defect properties in a-plane GaN - art. no. 689403
- 2007On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy
- 2007Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphirecitations
- 2006The versatility of hot-filament activated chemical vapor depositioncitations
- 2006Anti-diffusion barriers for gold-based metallizations to p-GaN
- 2006TEM analyses of wurtzite InGaN islands grown by MOVPE and MBEcitations
- 2006Anisotropic spatial correlation of CdSe/Zn(S)Se quantum dot stacks grown by MBEcitations
- 2006Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopycitations
- 2005Surfactant-mediated epitaxy of Ge on Si(111)citations
- 2005Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
- 2004Determination of the anisotropic optical properties for perfluorinated vanadyl phthalocyanine thin filmscitations
- 2004Microstructural study of quantum well degradation in ZnSe-based laser diodes
- 2002On the way to the II-VI quantum dot VCSELcitations
- 2002Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride filmscitations
Places of action
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book
Microstructural study of quantum well degradation in ZnSe-based laser diodes
Abstract
The possibility to grow CdZnSSe quantum structures with a high structural quality is extremely important for light emitting devices in the blue-green spectral range. However, during device operation the degradation of the quantum well reduces the lifetime severely due to the formation of dark spot and dark line defects, which are not clearly understood. To investigate the mechanisms of defects formation degradation studies were performed for ZnSe-based laser diodes with quaternary CdZnSSe quantum well structures by means of electroluminescence, high-resolution X-ray diffraction and transmission electron microscopy. It was found that the degradation is closely connected to a blue shift of the emitted light and the formation of defects which are confined near to the quantum well. A partial broadening of the quantum well could be observed, which is attributed to the outdiffusion of Cd from the active region. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.