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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Figge, S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2013Phase diagram and critical behavior of the random ferromagnet Ga1-xMnxNcitations
- 2012Ga1-xMnxN epitaxial films with high magnetizationcitations
- 2007Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphirecitations
- 2007Defect distribution in a-plane GaN on Al2O3citations
- 2006Anti-diffusion barriers for gold-based metallizations to p-GaN
- 2006High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphirecitations
- 2006Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopycitations
- 2005Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
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booksection
Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
Abstract
The effect of a highly Mg doped subcontact layer on top of GaN grown by metal organic vapor phase epitaxy and its interface to a Pd/Au contact layer was investigated by means of transmission electron microscopy and electrical characterization techniques. Use was made of prior investigations of the Mg doping characteristics, which showed the existence of a segregation related defect free layer even for doping levels as high as 5x10(-19) cm(-3), which thickness depends on the Mg to Ga molar precursor flow ratio. For a given subcontact layer thickness of 15 nm a critical precursor molar flow ratio of 0.035 resulted in a smooth surface showing an interfacial layer indicating a Pd/Ga alloying. This layer resulted in a contact resistivity as low as 2x10(-5) Omega cm(2). For a flow ratio of 0.070 the surface was found to be rough due to defect formation resulting in a contact resistivity as high as 10(-3) Omega cm(2) similar to the value obtained without subcontact layer. Moreover, the metallization layer showed in all cases a texture of the 111 lattice planes with respect to the 0002 planes of the GaN.