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Monemar, B.
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Publications (4/4 displayed)
- 2007On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy
- 2007Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphirecitations
- 2007Defect distribution in a-plane GaN on Al2O3citations
- 2006High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphirecitations
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booksection
On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy
Abstract
Non-polar a-plane GaN films grown by hydride vapor phase epitaxy were studied by means of transmission electron microscopy in order to elucidate defect formation mechanisms. The typical defects found were 11 basal plane stacking faults and Frank-Shockley partials. Moreover, prismatic stacking faults could be identified, which were lying on the (01-10) and (11-23) planes forming closed domains and occasionally containing rectangular voids, which were found to be nanopipes originating at the interface with the substrate. The energetics of the partial dislocation formation mechanism is discussed.