| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kaminska, E.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2016Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stabilitycitations
- 2016Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structurescitations
- 2006Quantum nanostructures of paraelectric PbTecitations
- 2006Anti-diffusion barriers for gold-based metallizations to p-GaN
- 2006PbTe - A new medium for quantum ballistic devicescitations
- 2005In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin filmscitations
- 2005Disorder suppression and precise conductance quantization in constrictions of PbTe quantum wellscitations
- 2004Unidirectional transmission of electrons in a magnetic field gradientcitations
- 2004Ballistic transport in PbTe-based nanostructurescitations
- 2004Quantum Hall ferromagnetism in II-VI based alloyscitations
- 2004Quantum Hall ferromagnet in magnetically-doped quantum wellscitations
- 2003Quantum Hall ferromagnet in magnetically-doped quantum wells
- 2002Ising quantum Hall ferromagnet in magnetically doped quantum wellscitations
- 2002Transparent ZnO-based ohmic contact to p-GaNcitations
- 2002Spin alignment of electrons in PbTe/(Pb,Eu)Te nanostructurescitations
- 2002Effects of spin polarization on electron transport in modulation-doped Cd1-xMnxTe/Cd1-yMgyTe : I heterostructurescitations
- 2001Conductance noise and irreversibility in diluted magnetic semiconductors
- 2000Temperature and size scaling of the QHE resistance: the case of large spin splittingcitations
- 2000Quantum Hall effect in the highly spin-polarized electron systemcitations
Places of action
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booksection
Anti-diffusion barriers for gold-based metallizations to p-GaN
Abstract
We propose a new metallization scheme to p-GaN, where thin-film transition metal nitrides have been applied to improve thermal stability of gold-based metallization. In this metallization scheme the Pd/Au bilayer was used to form low-resistivity ohmic contact to p-GaN, while Ta-Si-N, Ti-Si-N, and Ti-W-N anti-diffusion barriers were used to protect contact metallization from interaction with Au overlayer. We present the details of optimization of process parameters of barrier layer fabrication and show that Ta0.34Si0.25N0.41 and Ti0.26Si0.0.17N0.57 thin films fabricated by reactive magnetron sputtering show excellent barrier properties under high temperature stress.