| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Figge, S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2013Phase diagram and critical behavior of the random ferromagnet Ga1-xMnxNcitations
- 2012Ga1-xMnxN epitaxial films with high magnetizationcitations
- 2007Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphirecitations
- 2007Defect distribution in a-plane GaN on Al2O3citations
- 2006Anti-diffusion barriers for gold-based metallizations to p-GaN
- 2006High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphirecitations
- 2006Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopycitations
- 2005Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contacts
Places of action
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booksection
Anti-diffusion barriers for gold-based metallizations to p-GaN
Abstract
We propose a new metallization scheme to p-GaN, where thin-film transition metal nitrides have been applied to improve thermal stability of gold-based metallization. In this metallization scheme the Pd/Au bilayer was used to form low-resistivity ohmic contact to p-GaN, while Ta-Si-N, Ti-Si-N, and Ti-W-N anti-diffusion barriers were used to protect contact metallization from interaction with Au overlayer. We present the details of optimization of process parameters of barrier layer fabrication and show that Ta0.34Si0.25N0.41 and Ti0.26Si0.0.17N0.57 thin films fabricated by reactive magnetron sputtering show excellent barrier properties under high temperature stress.