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Mueller, A. H.
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article
Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
Abstract
<p>(Ba,Sr)TiO<sub>3</sub> (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO<sub>2</sub> layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO<sub>2</sub> films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO<sub>2</sub>. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density D<sub>it</sub> of an order of magnitude was observed for oxidized Si substrates.</p>