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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vickridge, Ian
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Topics
Publications (17/17 displayed)
- 2024Exploring OH incorporation pathways in pulsed laser deposited EuOOH thin films
- 2021The carbon and hydrogen contents in ALD-grown ZnO films define a narrow ALD temperature windowcitations
- 2020Harnessing Atomic Layer Deposition and Diffusion to Spatially Localize Rare-Earth Ion Emitterscitations
- 2020Low resistivity amorphous carbon-based thin films employed as anti-reflective coatings on coppercitations
- 2017XPS and NRA investigations during the fabrication of gold nanostructured functionalized screen-printed sensors for the detection of metallic pollutantscitations
- 2015Rutherford Backscattering Spectrometry analysis of iron-containing Bi2Se3 Topological Insulator thin filmscitations
- 2014Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistorscitations
- 2011Ferromagnetism in Ga0.90Mn0.10As1-yPy: From the metallic to the impurity band conduction regimecitations
- 2008Li-ion intercalation in thermal oxide thin films of MoO3 as studied by XPS, RBS, and NRAcitations
- 2007Ageing of V2O5 thin films induced by Li intercalation multi-cyclingcitations
- 2006TaSiN diffusion barriers deposited by reactive magnetron sputteringcitations
- 2005Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies
- 2005Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputteringcitations
- 2005Control of the reactivity at a metal/silica interfacecitations
- 2004Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies
- 2004Study of thin hafnium oxides deposited by atomic layer depositioncitations
- 2002Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiCcitations
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document
Characterization of SiC thin film obtained by magnetron reactive sputtering : IBA, IR and Raman studies
Abstract
Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H-2) at temperatures, T-s, varying from 200° C to 600° C has been used to grow SiC thin films. We report on the influence of T-s on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the C-12(d,p(0))C-13 nuclear reaction and elastic recoil detection analysis (ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As T-s is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.