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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Guina, Mircea
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (36/36 displayed)
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfacescitations
- 2023Tuneable Nonlinear Spin Response in a Nonmagnetic Semiconductor
- 2022Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2021Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2021Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filteringcitations
- 2021Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filteringcitations
- 2019Optimization of Ohmic Contacts to p-GaAs Nanowirescitations
- 2019Optimization of Ohmic Contacts to p-GaAs Nanowirescitations
- 2019Thermophotonic cooling in GaAs based light emitterscitations
- 2019V-groove etched 1-eV-GaInNAs nipi solar cellcitations
- 2019Observation of local electroluminescent cooling and identifying the remaining challenges
- 2019Gradients of Be-dopant concentration in self-catalyzed GaAs nanowirescitations
- 2019Influence of ex-situ annealing on the properties of MgF2 thin films deposited by electron beam evaporationcitations
- 2018Surface doping of GaxIn1−xAs semiconductor crystals with magnesiumcitations
- 2017The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wellscitations
- 2017Structured metal/polymer back reflectors for III-V solar cells
- 2017Photo-acoustic Spectroscopy of Resonant Absorption in III-V Semiconductor Nanowires
- 2016High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD techniquecitations
- 2016Determination of composition and energy gaps of GaInNAsSb layers grown by MBEcitations
- 2016Optical Energy Transfer and Loss Mechanisms in Coupled Intracavity Light Emitterscitations
- 2016Combined MBE-MOCVD process for high-efficiency multijunction solar cells
- 2016High efficiency multijunction solar cells: Electrical and optical properties of the dilute nitride sub-junctions
- 2016Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-xBix/GaAs quantum wellscitations
- 2015Defects in dilute nitride solar cells
- 2015Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayerscitations
- 2015Dilute nitrides for boosting the efficiency of III-V multijunction solar cells
- 2015Detecting lateral composition modulation in dilute Ga(As,Bi) epilayerscitations
- 2015Te-doping of self-catalyzed GaAs nanowirescitations
- 2015Oxidation of the GaAs semiconductor at the Al2O3/GaAs junctioncitations
- 2015Oxidation of the GaAs semiconductor at the Al2O3/GaAs junctioncitations
- 2014Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-Ocitations
- 2012Dilute nitride and GaAs n-i-p-i solar cellscitations
- 2011Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk laserscitations
- 2011Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates:A catalyst for removal of amorphous surface oxidescitations
- 2008Passively Q-switched Tm3+, Ho3+-doped silica fiber laser using a highly nonlinear saturable absorber and dynamic gain pulse compressioncitations
Places of action
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document
High efficiency multijunction solar cells: Electrical and optical properties of the dilute nitride sub-junctions
Abstract
Multijunction solar cells with III-V semiconductor sub-junctions have the highest conversion efficiency of all photovoltaic devices [1]. These devices are applied in concentrated photovoltaics, where optical components are used for concentrating light ultimately over thousand time smaller solar cell chip. Another important application area is satellites and other space applications. High power-to-mass ratio and radiation hardness makes multijunction III-V semiconductor solar cells clearly the most applied source for electricityin space. Key parameter in these devices is conversion efficiency. The world record conversion efficiency is currently 46%, when theoretical limit is 86.8% [1,2]. Although theoretical maximum cannot be achiever, there is still plenty of room to improve. In order to achieve very high efficiencies, high-quality materials optimized for absorbing certain parts of the solar spectrum are needed. Dilute nitrides, in the form of GaInNAs(Sb), is particularly interesting material family, because it can be grown lattice-matched on conventional GaAs and Ge substrates with the band-gap of ~1.4 eV‒0.7 eV [3]. For example, GaInP / GaAs / GaInNAs(Sb) (/ Ge) solar cell has realistic potential for achieving a very high conversion efficiency in terrestrial and space applications [4]. One of the main challenges is to be able to grown high-quality dilute nitride with ~1 eV band-gap. We present recent results on electrical and optical properties of ~1 eV band-gap dilute nitride solar cells, grown by molecular beam epitaxy. The influence of materials composition, fabrication parameters, as well as post growth treatments on the material properties and photovoltaic performance are shown [5,6]. To this end, we use deep level transient Fourier spectroscopy (DLTFS), capacitance-voltage spectroscopy, external quantum efficiency measurements, light-current-voltage measurements, and photoluminescence spectroscopy. We show how material composition has a remarkable influence on the deep levels properties and background doping. Broader defect-related DLTFS spectra were recorded from the compounds with more material components (GaInNAs vs. GaNAsSb vs. GaInNAsSb). Sb was found to reduce the unintentional background doping and at the same time increase the effective capture cross section of the dominant deep levels [6]. Furthermore, we show a clear dependency between several critical material parameters and As/group-III flux ratio: as a result increase in flux ratio decreases the dilute nitride solar cell performance at investigated range [5]. The role of Ga vacancies and related point defects on the background doping will be also discussed. The results are also reflected against the operation of high-effiency multijunction solar cells with dilute nitride sub-junctions.1. M. A. Green, K. Emery, Y. Hishikawa, W. Warta, E. D. Dunlop, “Solar cell efficiency tables (version 47)” Progress in Photovoltaics: Research and Applications 24, pp. 3–11, 2015.2. A. Martí, G. L. Araújo, "Limiting efficiencies for photovoltaic energy conversion in multigap systems," Solar Energy Materials & Solar Cells 43, pp. 203–222, 1996.3. A. Aho, V. Polojärvi, V. Korpijärvi, J. Salmi, A. Tukiainen, P. Laukkanen, M. Guina, "Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells", Solar Energy Materials & Solar Cells 124, pp. 150–158, 2014.4. A. Aho, A. Tukiainen, V. Polojärvi, M. Guina, “Performance assessment of multijunction solar cells incorporating GaInNAsSb”, Nanoscale Research Letters 9, pp. 61:1–61:7.5. V. Polojärvi, A. Aho, A. Tukiainen, M. Raappana, T. Aho, A. Schramm, M. Guina, “Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells”, Solar Energy Materials & SolarCells 149, pp. 213–220, 2016.6. V. Polojärvi, A. Aho, A. Tukiainen, A. Schramm, M. Guina, “Comparative study of defect levels in GaInNAs, GaNAsSb, and GaInNAsSb for high-efficiency solar cells”, Applied Physics Letters 108, pp. 122104:1–122104:5, 2016.