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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Khorramdel, Behnam
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2018High-resolution E-jet Enhanced MEMS Packaging
- 2017Inkjet printing technology for increasing the I/O density of 3D TSV interposerscitations
- 2017Combination of E-jet and inkjet printing for additive fabrication of multilayer high-density RDL of silicon interposercitations
- 2016Fabrication and electrical characterization of partially metallized vias fabricated by inkjetcitations
- 2015Metallization of high density TSVs using super inkjet technologycitations
Places of action
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document
High-resolution E-jet Enhanced MEMS Packaging
Abstract
High-resolution electrohydrodynamic inkjet printing has potential to simplify the existing MEMS package fabrication through its additive and digital properties without sacrifices in the I/O density of the package. Initially, the replacement of certain lithographic process steps would lead to decreased material consumption and increased cost-effectiveness of the package fabrication; in long term, the large-scale adoption of additive process steps would enable increasing device customizability and lead to cost-effective fabrication of small batches and even fully tailored device specific MEMS packages. In our work, we have demonstrated the feasibility of this approach by replacing selected lithographic process steps by using high-resolution inkjet technology (Super Inkjet, SIJ Tech.) for metallization of high-density redistribution layers (RDL), metallization of through-silicon-vias (TSV) and fabrication of under bump metallization (UBM).