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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tukiainen, Antti
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Ti3+ Self-Doping-Mediated Optimization of TiO2 Photocatalyst Coating Grown by Atomic Layer Depositioncitations
- 2022Insights into Tailoring of Atomic Layer Deposition Grown TiO2 as Photoelectrode Coating
- 2022Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2022Low-Temperature Route to Direct Amorphous to Rutile Crystallization of TiO2Thin Films Grown by Atomic Layer Depositioncitations
- 2022Tunable Ti3+-Mediated Charge Carrier Dynamics of Atomic Layer Deposition-Grown Amorphous TiO2citations
- 2021Comparison of the heat-treatment effect on carrier dynamics in TiO2 thin films deposited by different methodscitations
- 2021Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2021Interface Engineering of TiO2 Photoelectrode Coatings Grown by Atomic Layer Deposition on Siliconcitations
- 2020Optimization of photogenerated charge carrier lifetimes in ald grown tio2 for photonic applicationscitations
- 2019Thermophotonic cooling in GaAs based light emitterscitations
- 2019Highly efficient charge separation in model Z-scheme TiO2/TiSi2/Si photoanode by micropatterned titanium silicide interlayercitations
- 2019Observation of local electroluminescent cooling and identifying the remaining challenges
- 2018Surface doping of GaxIn1−xAs semiconductor crystals with magnesiumcitations
- 2017Structured metal/polymer back reflectors for III-V solar cells
- 2016High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD techniquecitations
- 2016Determination of composition and energy gaps of GaInNAsSb layers grown by MBEcitations
- 2016Optical Energy Transfer and Loss Mechanisms in Coupled Intracavity Light Emitterscitations
- 2016Combined MBE-MOCVD process for high-efficiency multijunction solar cells
- 2016High efficiency multijunction solar cells: Electrical and optical properties of the dilute nitride sub-junctions
- 2015Defects in dilute nitride solar cells
- 2015Dilute nitrides for boosting the efficiency of III-V multijunction solar cells
- 2004Effects of rapid thermal annealing on deep levels in n -GaInPcitations
Places of action
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document
Dilute nitrides for boosting the efficiency of III-V multijunction solar cells
Abstract
Multijunction III-V solar cells have the highest conversion efficiencies among all photovoltaic devices with current world record of 46 %, measured under concentrated light [1]. Furthermore, III-V semiconductor solar cells are found to be the best choice for generating electricity for satellites, because of high power-to-mass ratio and good radiation hardness. Although so far, the record conversion efficiency has increased almost one percentage point per year, new materials and concepts are needed to overcome the 50 % conversion efficiency barrier. <br/><br/>To this end, one of the most promising III-V photovoltaic material families is dilute nitrides. Introducing nitrogen to GaInAs shrinks the band gap by influencing the conduction band, and forming a localized band inside the material [2]. Nitrogen also compensates the compressive strain caused by In, when material is grown on GaAs or Ge substrates, preventing the formation of harmful dislocations. Capability to achieve a band gap between 1.4-0.8 eV and still maintain lattice matching [3], makes GaInNAs a good candidate as a part of multijunction solar cell with conversion efficiency exceeding 50 %.<br/><br/>In this presentation we discuss the use of optimized [4] bulk GaInNAs hetero-structures in multijunction solar cell (Figure 1.). Moreover, we have used GaInNAs and GaNAs for strain compensation and mediation, to absorb photons, and to boost the thermal escape of charge carriers in InAs quantum dot solar cell [5]. The properties of the dilute nitride based solar cells developed will be discussed.<br/><br/> <br/><br/>Figure 1: A photograph of multijunction solar cell for concentrator applications, designed, fabricated and processed by the authors at Optoelectronics Research Centre, Tampere University of Technology.<br/><br/>References<br/>[1] M. A. Green, K. Emery, Y. Hishikawa, W. Warta and E. D. Dunlop, Prog. Photovoltaics Res. Appl. 23, 805 (2015).<br/>[2] M. Henini (Ed.), Dilute Nitride Semiconductors(Elsevier, Amsterdam, 2005).<br/>[3] J. S. Harris, R. Kudrawiec, H. Yuen, S. Bank, H. Bae, M. Wistey, D. Jackrel, E. Pickett, T. Sarmiento and L. Goddard, Phys. Status Solidi B 244,2707 (2007).<br/>[4] A. Aho, V. Polojärvi, V.-M. Korpijärvi, J. Salmi, A. Tukiainen, P. Laukkanen and M. Guina, Solar Energy Mater. Solar Cells 124, 150 (2014).<br/>[5] V. Polojärvi, E.-M. Pavelescu, A. Schramm, A. Tukiainen, A. Aho, J. Puustinen and M. Guina, Scr. Mater. 108, 122 (2015).<br/>